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Gas-initiated chemical alterations in ZnMgO electron transport layer:Key gas instability drivers in quantum-dot light-emitting diodes
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作者 Yibo Feng Pavel Krasnov +5 位作者 Min Yang Menglin Li Alina Boldyreva Kirill Boldyrev yangyang ju Haizheng Zhong 《Nano Research》 2025年第9期1164-1172,共9页
The open-air fabrication of quantum-dot light-emitting diodes(QLEDs)shows great potential for scalable manufacturing.However,the processing stability of QLED devices remains a fundamental barrier to their industrializ... The open-air fabrication of quantum-dot light-emitting diodes(QLEDs)shows great potential for scalable manufacturing.However,the processing stability of QLED devices remains a fundamental barrier to their industrialization.This study investigates the gas-related stability of QLEDs based on the ZnMgO electron transport layer(ETL).By analyzing the current density–voltage(J–V)characteristics of QLEDs and the corresponding sub-devices of functional layers in different gas environments,we demonstrate that the ZnMgO ETL plays a critical role in determining the gas-related stability of QLEDs.Further characterizations and density functional theory(DFT)calculations indicate that gas-induced surface reactions—particularly modifications to surface states and the formation of stable ZnMgO/OH—are the primary causes of performance degradation of QLEDs. 展开更多
关键词 open-air fabrication of quantum-dot light-emitting diodes(QLEDs) processing stability ZnMgO electron transport layer(ETL) gas-induced surface reactions
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