Combining the phase-field method and the moving boundary method,a three-dimensional phase-field simulation was conducted for the growth and grain evolution of Ti films deposited by physical vapor deposition under diff...Combining the phase-field method and the moving boundary method,a three-dimensional phase-field simulation was conducted for the growth and grain evolution of Ti films deposited by physical vapor deposition under different deposition rates and grain orientations.The evolution of grain morphology and grain orientation was also taken into consideration.Simulation results show that at lower deposition rates,the surface of the formed Ti film exhibits a distinct oriented texture structure.The surface roughness of the Ti film is positively correlated with the grain misorientation.Moreover,the surface roughness obtained from the simulation is in good agreement with the experiment results.展开更多
SiC MOSFET广泛应用于高频领域,这使其在半桥电路中极易发生串扰现象。实际情况中,半桥电路上、下桥臂的栅极电阻通常保持一致。然而,现有的串扰研究仅在某一桥臂的栅极电阻为定值的条件下分析另一桥臂中栅极电阻的影响,难以获取实际电...SiC MOSFET广泛应用于高频领域,这使其在半桥电路中极易发生串扰现象。实际情况中,半桥电路上、下桥臂的栅极电阻通常保持一致。然而,现有的串扰研究仅在某一桥臂的栅极电阻为定值的条件下分析另一桥臂中栅极电阻的影响,难以获取实际电路中的串扰特性。研究了SiC MOSFET半桥电路串扰特性,分析了上、下桥臂栅极电阻单独变化与同步变化对串扰的影响规律,并探究了不同共源极电感情况下栅极电阻对串扰电压的影响,最后搭建了动态特性测试平台,实验验证了理论分析的正确性。结果表明,与只改变关断器件的栅极电阻相比,上、下桥臂同步变化时串扰电压的正峰值更小,栅极电阻的取值范围也更宽,为半桥电路中SiC MOSFET的低干扰驱动设计提供了理论参考。展开更多
基金National MCF Energy R&D Program of China(2018YFE0306100)Natural Science Foundation of Hunan Province for Distinguished Young Scholars(2021JJ10062)+1 种基金National Natural Science Foundation of China(52101028)China Postdoctoral Science Foundation(2021M703628)。
文摘Combining the phase-field method and the moving boundary method,a three-dimensional phase-field simulation was conducted for the growth and grain evolution of Ti films deposited by physical vapor deposition under different deposition rates and grain orientations.The evolution of grain morphology and grain orientation was also taken into consideration.Simulation results show that at lower deposition rates,the surface of the formed Ti film exhibits a distinct oriented texture structure.The surface roughness of the Ti film is positively correlated with the grain misorientation.Moreover,the surface roughness obtained from the simulation is in good agreement with the experiment results.
