Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study inve...Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.展开更多
AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation by 2.1 GeV^(181) Ta^(32+) ions,the electrical characteristics of the devices significantly decre...AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation by 2.1 GeV^(181) Ta^(32+) ions,the electrical characteristics of the devices significantly decreased.The threshold voltage shifted positively by approximately 25%and the saturation currents decreased by approximately 14%.Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites,which increased the gate current tunneling probability.According to the pulsed output characteristics,the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation.The time constants of the induced surface traps were mainly less than 10μs.展开更多
The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate le...The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.展开更多
The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT)is compared with that of conventional high electron mobility transistor(HEMT)under direct current(DC)s...The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT)is compared with that of conventional high electron mobility transistor(HEMT)under direct current(DC)stress,and the degradation mechanism is studied.Under the channel hot electron injection stress,the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer,and that under the gate dielectric of the device.The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress,which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel.However,because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel,the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT.The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.展开更多
基金supported by the National Natural Science Foundation of China(Nos.12035019,62234013,12205350,12075290,12175287)the China National Postdoctoral Program for Innovative Talents(BX20200340)+1 种基金the fund of Innovation Center of Radiation Application(No.KFZC2022020601)the Chinese Academy of Sciences(CAS)“Light of West China"Program hosted by Jian Zeng.
文摘Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12035019 and 11690042)Science Challenge Projects(Grant No.TZ2018004)。
文摘AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation by 2.1 GeV^(181) Ta^(32+) ions,the electrical characteristics of the devices significantly decreased.The threshold voltage shifted positively by approximately 25%and the saturation currents decreased by approximately 14%.Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites,which increased the gate current tunneling probability.According to the pulsed output characteristics,the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation.The time constants of the induced surface traps were mainly less than 10μs.
基金supported by the Key Program of the National Natural Science Foundation of China(Grant No.61334002) and the National Natural Science Foundation of China(Grant Nos.61604114,61404097,and 61504099)
文摘The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.
基金the Laboratory Open Fund of Beijing Smart-chip Microelectronics Technology Co.Ltd and the National Natural Science Foundation of China(Grant No.11690042)+1 种基金the Science Challenge Project,China(Grant Nos.TZ2018004 and 12035019)the National Major Scientific Research Instrument Projects,China(Grant No.61727804)。
文摘The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT)is compared with that of conventional high electron mobility transistor(HEMT)under direct current(DC)stress,and the degradation mechanism is studied.Under the channel hot electron injection stress,the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer,and that under the gate dielectric of the device.The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress,which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel.However,because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel,the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT.The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.
