Ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))/semiconducting poly(3-hexyl thiophene)(P3HT)blend systems have drawn great attention with their potential use for electronic applications,particul...Ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))/semiconducting poly(3-hexyl thiophene)(P3HT)blend systems have drawn great attention with their potential use for electronic applications,particularly non-volatile memory devices.It is essential to grasp a full understanding of the crystallization habits of the two polymers on different substrates for purposeful control of the structures of the blend and therefore the properties of the devices.Here,the effects of structure and morphology of the blend films generated at different substrate surfaces on the ferroelectric and switching properties of related devices are reported.It is identified that P(VDF-TrFE)/P3HT blend films prepared on graphene substrate show not only an obvious optimization in the ferroelectric behavior of P(VDF-TrFE),but also an enhancement of the charge transport within P3HT domains.By employing sandwich structure constructed by silver electrode and P3HT/P(VDF-TrFE)blend film on graphene substrate,high-performance ferroelectric memory devices have been obtained,which exhibit a great electrical switching behavior with high ON/OFF ratio of about 1000 and low coercive voltage of approximately 5 V.These findings provide useful guidance for fabricating highperformance ferroelectric memory devices.展开更多
We are sorry for the misuploading of Fig.1(a)as Fig.2(b),which makes Fig.2(b)the same as Fig.1(a).The correct Fig.2(b)is presented below.It should be noted that the replacement of Fig.2(b)does not influence the discus...We are sorry for the misuploading of Fig.1(a)as Fig.2(b),which makes Fig.2(b)the same as Fig.1(a).The correct Fig.2(b)is presented below.It should be noted that the replacement of Fig.2(b)does not influence the discussion and conclusion.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.21774011,22022501 and 22073006).
文摘Ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))/semiconducting poly(3-hexyl thiophene)(P3HT)blend systems have drawn great attention with their potential use for electronic applications,particularly non-volatile memory devices.It is essential to grasp a full understanding of the crystallization habits of the two polymers on different substrates for purposeful control of the structures of the blend and therefore the properties of the devices.Here,the effects of structure and morphology of the blend films generated at different substrate surfaces on the ferroelectric and switching properties of related devices are reported.It is identified that P(VDF-TrFE)/P3HT blend films prepared on graphene substrate show not only an obvious optimization in the ferroelectric behavior of P(VDF-TrFE),but also an enhancement of the charge transport within P3HT domains.By employing sandwich structure constructed by silver electrode and P3HT/P(VDF-TrFE)blend film on graphene substrate,high-performance ferroelectric memory devices have been obtained,which exhibit a great electrical switching behavior with high ON/OFF ratio of about 1000 and low coercive voltage of approximately 5 V.These findings provide useful guidance for fabricating highperformance ferroelectric memory devices.
文摘We are sorry for the misuploading of Fig.1(a)as Fig.2(b),which makes Fig.2(b)the same as Fig.1(a).The correct Fig.2(b)is presented below.It should be noted that the replacement of Fig.2(b)does not influence the discussion and conclusion.
