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Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique 被引量:2
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作者 M.A.Mahadik y.m.hunge +2 位作者 S.S.Shinde K.Y.Rajpure C.H.Bhosale 《Journal of Semiconductors》 EI CAS CSCD 2015年第3期23-28,共6页
Highly transparent and preferential c-axis oriented nanocrystalline undoped and A1 doped zinc oxide (AZO) thin films have been deposited onto amorphous glass substrate by spray pyrolysis. The XRD studies reveal that... Highly transparent and preferential c-axis oriented nanocrystalline undoped and A1 doped zinc oxide (AZO) thin films have been deposited onto amorphous glass substrate by spray pyrolysis. The XRD studies reveal that AZO with a hexagonal (wurtzite) crystal structure having (002) preferred orientation is formed. The atomic force microscope (AFM) shows uniform surface topography. The optical band gap values of undoped and AZO thin films were changed from 3.34 to 3.35 eV. The band gap energy and photoluminescence are found to depend on the Al doping. Thermoelectric power measurement shows film having n-type in nature. Dielectric constant and loss (tan δ) were found to be frequency dependent. Interparticle interactions in the deposited films are studied by complex impendence spectroscopy. 展开更多
关键词 ALUMINUM zinc oxide structural morphological and dielectrical properties
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