Temperature dependences of the high-field electron trapping in a SiO_(2) thin film for temperature ranging from 100 to 423K are investigated.It is found that in the investigated temperature range,when the temperature ...Temperature dependences of the high-field electron trapping in a SiO_(2) thin film for temperature ranging from 100 to 423K are investigated.It is found that in the investigated temperature range,when the temperature decreases the effective surface density of the electron traps in the film decreases;the energy levels of the effective electron traps at high field concentrate at very narrow energy range.The thermal generation rate is found to be 1.283x10^(10)/cm^(2).K and its activation energy is 0.192eV.Based on these results,a model for the electron traps generated at high field in thin oxide is proposed.展开更多
The behaviors of constant electric field stressing of the thin(200Å)oxynitride and re-oxidized oxynitride films are investigated.The flat-band shift is not a simple function of the stressing field.The observed ph...The behaviors of constant electric field stressing of the thin(200Å)oxynitride and re-oxidized oxynitride films are investigated.The flat-band shift is not a simple function of the stressing field.The observed phenomena are attributed to the significance of trap filling,electronic tunneling and trap generation at different stressing field strengths.Re-oxidized sample is found to have high resistant to the electron tunneling and trap generation.展开更多
基金Supported in part by the Strategic Research Grant of City University of Hong Kong
文摘Temperature dependences of the high-field electron trapping in a SiO_(2) thin film for temperature ranging from 100 to 423K are investigated.It is found that in the investigated temperature range,when the temperature decreases the effective surface density of the electron traps in the film decreases;the energy levels of the effective electron traps at high field concentrate at very narrow energy range.The thermal generation rate is found to be 1.283x10^(10)/cm^(2).K and its activation energy is 0.192eV.Based on these results,a model for the electron traps generated at high field in thin oxide is proposed.
基金Supported in part by the National Natural Science Foundation of Chinathe Croucher Foundation and the UPGC research grant of Hong Kong。
文摘The behaviors of constant electric field stressing of the thin(200Å)oxynitride and re-oxidized oxynitride films are investigated.The flat-band shift is not a simple function of the stressing field.The observed phenomena are attributed to the significance of trap filling,electronic tunneling and trap generation at different stressing field strengths.Re-oxidized sample is found to have high resistant to the electron tunneling and trap generation.
