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The Novel Semiconductor Nanowire Heterostructures
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作者 J.Q.Hu y.bando +1 位作者 J.H.Zhan D.Golberg 《复旦学报(自然科学版)》 CAS CSCD 北大核心 2007年第5期712-713,共2页
1 Results If one-dimensional heterostructures with a well-defined compositional profile along the wire radial or axial direction can be realized within semiconductor nanowires, new nano-electronic devices,such as nano... 1 Results If one-dimensional heterostructures with a well-defined compositional profile along the wire radial or axial direction can be realized within semiconductor nanowires, new nano-electronic devices,such as nano-waveguide and nano-capcipator, might be obtained. Here,we report the novel semiconducting nanowire heterostructures:(1) Si/ZnS side-to-side biaxial nanowires and ZnS/Si/ZnS sandwich-like triaxial nanowires[1],(2) Ga-Mg3N2 and Ga-ZnS metal-semiconductor nanowire heterojunctions[2-3]and (3) ... 展开更多
关键词 NANOWIRES HETEROSTRUCTURES SEMICONDUCTING PROPERTIES
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Controlled Growth and Field-emission Application of 1D ZnS Nanostructures
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作者 X.S.Fang y.bando D.Golberg 《复旦学报(自然科学版)》 CAS CSCD 北大核心 2007年第5期711-,共1页
1 Results One-dimensional (1D) nanostructures have recently stimulated great interest due to their potential value for understanding fundamental physical concepts and for applications in constructing nanoscale electri... 1 Results One-dimensional (1D) nanostructures have recently stimulated great interest due to their potential value for understanding fundamental physical concepts and for applications in constructing nanoscale electric and optoelectronic devices since the discovery of carbon nanotubes[1]. ZnS is one of the first semiconductors discovered and probably one of the most important materials in the electronics industry with a wide range of applications[2]. Controllable growth of nanostructures is a crucial is... 展开更多
关键词 controlled growth FIELD-EMISSION ZNS
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