The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exh...The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer,with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes.When illuminated upon ultraviolet light at 0 V bias,the Pt/GaN device exhibits significant photovoltaic performances,including a peak responsivity of 200.1 mA W−1,external quantum efficiency of 65%,and other figures-of-merit.Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band,which considerably improves its photoresponse performance and robustness in application.To realize the multipurpose capability of the devices,we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU.Moreover,the prepared devices can be used as optical data receivers for optical communication.These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.展开更多
Featured with light emission and detection coexistence phenomenon,nitride-based multiple-quantum-well(MQW)diodes integrated chip has been proven to be an attractive structure for application prospects in variousfields...Featured with light emission and detection coexistence phenomenon,nitride-based multiple-quantum-well(MQW)diodes integrated chip has been proven to be an attractive structure for application prospects in variousfields such as lighting,sensing,optical communication,and otherfields.However,most of the recent reports are based on planar structures.Three-dimensional(3D)structures are endowed with extra advantages in direction,polarization,and absorption modulation and may pioneer a new way to make the same thing over and over again with interesting properties.In this paper,we designed and fabricated a singlecantilever InGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology.Experimental results indicate that the strain architecture of the multi-layer materials is the key principle for the self-warped device.The planar structure will bear greater compressive stress while the warped beam part has less stress,which results in differences in the optical and electrical performance.The strain-induced band bending highly influences the emission and detection properties,while the warped structure will introduce direction selectivity to the 3D device.As an emitter,3D structures exhibit a directional emission with lower turn-on voltage,higher capacitance,increased luminous intensity,higher external quantum efficiency(EQE),high–3 dB bandwidth,and redshifted peak wavelength.Besides,it can serve as an emitter for directional-related optical communication.As a receiver,3D structures have lower darkcurrent,higher photocurrent,and red-shifted response spectrum and also show directional dependence.Thesefindings not only deepen the understanding of the working principle of the singlecantilever GaN devices but also provide important references for device performance optimization and new applications in visible light communication(VLC)technology.展开更多
基金supported by National Natural Science Foundation of China(NSFC)(12374257)Funding for Outstanding Doctoral Dissertation in NUAA(BCXJ24-22).
文摘The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer,with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes.When illuminated upon ultraviolet light at 0 V bias,the Pt/GaN device exhibits significant photovoltaic performances,including a peak responsivity of 200.1 mA W−1,external quantum efficiency of 65%,and other figures-of-merit.Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band,which considerably improves its photoresponse performance and robustness in application.To realize the multipurpose capability of the devices,we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU.Moreover,the prepared devices can be used as optical data receivers for optical communication.These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.
基金supported by the Natural Science Foundation of Jiangsu Province(No.BK20210593)the National Natural Science Foundation of China(No.62204127)Open Fund of Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education NJ2024001.
文摘Featured with light emission and detection coexistence phenomenon,nitride-based multiple-quantum-well(MQW)diodes integrated chip has been proven to be an attractive structure for application prospects in variousfields such as lighting,sensing,optical communication,and otherfields.However,most of the recent reports are based on planar structures.Three-dimensional(3D)structures are endowed with extra advantages in direction,polarization,and absorption modulation and may pioneer a new way to make the same thing over and over again with interesting properties.In this paper,we designed and fabricated a singlecantilever InGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology.Experimental results indicate that the strain architecture of the multi-layer materials is the key principle for the self-warped device.The planar structure will bear greater compressive stress while the warped beam part has less stress,which results in differences in the optical and electrical performance.The strain-induced band bending highly influences the emission and detection properties,while the warped structure will introduce direction selectivity to the 3D device.As an emitter,3D structures exhibit a directional emission with lower turn-on voltage,higher capacitance,increased luminous intensity,higher external quantum efficiency(EQE),high–3 dB bandwidth,and redshifted peak wavelength.Besides,it can serve as an emitter for directional-related optical communication.As a receiver,3D structures have lower darkcurrent,higher photocurrent,and red-shifted response spectrum and also show directional dependence.Thesefindings not only deepen the understanding of the working principle of the singlecantilever GaN devices but also provide important references for device performance optimization and new applications in visible light communication(VLC)technology.
