V-pits have been intensively studied for their role in light-emitting diodes(LEDs).The coverage of V-pits in InGaN/GaN multiquantum wells(MQWs)is critical for suppressing leakage path through electron blocking layer(E...V-pits have been intensively studied for their role in light-emitting diodes(LEDs).The coverage of V-pits in InGaN/GaN multiquantum wells(MQWs)is critical for suppressing leakage path through electron blocking layer(EBL).In this study,we have investigated the coverage of V-pits in green mini-LEDs modulated via growth parameters optimization and systematically analyzed the characteristics of the photoelectric properties associated with V-pits coverage on device.Elevated temperatures and pressures result in enhanced adatoms migration,which can achieve a coverage up to 98.8% of V-pits,improving the crystal quality due to stable surface.Electrical characterization reveals that although high-coverage devices exhibit suppressed leakage current,their peak external quantum efficiency(EQE)decreases,more seriously spectral blue shift and operating voltage increase due to compromised hole transport uniformity.Intriguingly,intermediate-coverage samples demonstrate superior breakdown voltage characteristics.Current-voltage curve analysis shows the ideality factor increases from 1.8 to 2.5 with improved coverage,indicating aggravated Shockley-Read-Hall(SRH)recombination with covered V-pits.展开更多
基金supported by the Special Key Project of Technological Innovation and Application Development in Chongqing(CSTB2023TIADKPX0017)the National Natural Science Foundation of China(Grant 22275154).
文摘V-pits have been intensively studied for their role in light-emitting diodes(LEDs).The coverage of V-pits in InGaN/GaN multiquantum wells(MQWs)is critical for suppressing leakage path through electron blocking layer(EBL).In this study,we have investigated the coverage of V-pits in green mini-LEDs modulated via growth parameters optimization and systematically analyzed the characteristics of the photoelectric properties associated with V-pits coverage on device.Elevated temperatures and pressures result in enhanced adatoms migration,which can achieve a coverage up to 98.8% of V-pits,improving the crystal quality due to stable surface.Electrical characterization reveals that although high-coverage devices exhibit suppressed leakage current,their peak external quantum efficiency(EQE)decreases,more seriously spectral blue shift and operating voltage increase due to compromised hole transport uniformity.Intriguingly,intermediate-coverage samples demonstrate superior breakdown voltage characteristics.Current-voltage curve analysis shows the ideality factor increases from 1.8 to 2.5 with improved coverage,indicating aggravated Shockley-Read-Hall(SRH)recombination with covered V-pits.
