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Regionally controlled ion-doping of organic electrochemical transistors for computing-memory co-integrated neuromorphic systems
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作者 Mancheng Li Wenjing Zhang +5 位作者 xinyang lv Xiaoci Liang Mengye Wang Chen Chen Chuan Liu Songjia Han 《npj Flexible Electronics》 2025年第1期241-270,共30页
Organic electrochemical transistors(OECTs),endued with processing and memory functionalities,present a remarkable potential for neuromorphic electronics.However,integrating processing and memory cores for neuromorphic... Organic electrochemical transistors(OECTs),endued with processing and memory functionalities,present a remarkable potential for neuromorphic electronics.However,integrating processing and memory cores for neuromorphic systems is complicated by heterogeneous material compatibility and device architecture constraints.Here,we demonstrate a versatile regionally controlled ion-doping strategy for modulating the operational mode of OECTs between high-performance computing and non-volatile memory,without varying the materials or operating conditions.The key to this method is the use of inkjet-printed electrolytes with programmable 3D architectures,which can be precisely deposited onto the OECT channel,achieving a tunable thickness ranging from 100 nm to several tens of micrometers.By engineering the electrolyte’s spatial structure,we demonstrate two complementary OECT configurations:ion-rich OECTs with multilayer electrolytes achieve high stimulus-resolution capability of 1 ms for dynamic computation,and ion-deficient OECTs with single-layer electrolytes establish stable ion-trapping memristive states(300 s retention).Moreover,the integration of ion-rich and ion-deficient OECTs enables a neuromorphic circuit capable of simultaneous encoding and storage of alphanumeric information.This study presents a simple yet effective strategy that overcomes material compatibility constraints and simplifies circuit design,paving the way for highly integrated neuromorphic systems based on OECTs. 展开更多
关键词 organic electrochemical transistor all-printed hydrogel electrolyte synaptic transistor
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Numerical study on the seismic fracturing and instability of anti-dip jointed rock slopes by the sub-block splitting DDA method
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作者 Ming Luo xinyang lv +2 位作者 Chunyu Li Qiang Yang Youjun Ning 《Intelligent Geoengineering》 2025年第4期262-273,共12页
The seismic failure of jointed rock slopes is essentially a problem of dynamic fracturing and instability of discontinuous rock masses.In this study,seismic failures of anti-dip jointed rock slopes are numerically inv... The seismic failure of jointed rock slopes is essentially a problem of dynamic fracturing and instability of discontinuous rock masses.In this study,seismic failures of anti-dip jointed rock slopes are numerically investigated by the sub-block splitting discontinuous deformation analysis(DDA)method.Firstly,diametrically compressive rock discs with a central pre-existing crack of different inclinations are simulated to verify the effectiveness of the sub-block splitting DDA method for rock fracturing simulations.Thereafter,the fracturing failure and instability process of five anti-dip jointed rock slopes with different configurations under the Wenchuan earthquake waves of different amplitudes are simulated.Results indicate that with larger excavation area of the slope and larger amplitude of the seismic loads,and under specific horizontal relative direction of the seismic wave to the slope(SSHRD),the slope stability will be dramatically reduced,and the failure mode will also be changed upon a basic mode of toppling.The surface and elevation amplification effects of the slope under seismic loads are successfully reproduced as well by the simulations.This work reveals the seismic failure process and mechanism of anti-dip jointed rock slopes,and could provide theoretical reference to the disaster prediction of anti-dip jointed rock slopes under earthquakes. 展开更多
关键词 Anti-dip jointed rock slope Rock fracturing Failure mode Seismic load Discontinuous deformation analysis(DDA)
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