The use of ferroelectric materials is believed to be a viable way to construct self-powered photodetectors based on the ferroelectric photovoltaic effect.However,the low photocurrent density of ferroelectric materials...The use of ferroelectric materials is believed to be a viable way to construct self-powered photodetectors based on the ferroelectric photovoltaic effect.However,the low photocurrent density of ferroelectric materials is a serious drawback that restricts their photo-detection applications.Herein,ultrahigh photodetection performances are achieved in hexagonal YbMnO_(3)-based self-powered photodetectors by optimizing the macroscopic polarization.The responsivity(R)and detectivity(D^(*))can reach 0.18/0.15 A W−1 and 6.73×10^(11)/5.76×10^(11) Jones under monochromatic light with a wavelength of 365/700 nm when the YbMnO_(3) thin film[YbMnO_(3)(1040)]is sintered at 1040℃.These excellent photo-detection performances are attributed to the high short-circuit current density which reaches 10.9 mA cm^(−2) under 1 sun illumination.A systematic structure and photo-electric characteristic analysis suggests that the formation of a strong domain and the distortion of the crystal structure lead to an enhanced macroscopic polarization in YbMnO_(3)(1040)without changing the bandgap.The enhanced polarization causes a ripple positive effect,which increases the driving force of photo-generated carrier separation and restrains recombination,leading to a high dissociation efficiency.This work demonstrates that the ferroelectric YbMnO_(3) thin film has great potential in the photo-detection field.展开更多
The anomalous photovoltaic(APV)effect is promising for high-performance ferroelectric materials and devices in photoelectric applications.However,it is a challenge how to tune the APV effect by utilizing the character...The anomalous photovoltaic(APV)effect is promising for high-performance ferroelectric materials and devices in photoelectric applications.However,it is a challenge how to tune the APV effect by utilizing the characteristic structure of ferroelectrics.Here,a domain engineering strategy is proposed to enhance the APV effect in lead-free 0.88(Na_(0.5)Bi_(0.5)TiO_(3))-0.12(Ba_(1–1.5x)S_(mx)TiO_(3))(NBT-BST)ferroelectric ceramics.By tuning the domain size based on Sm^(3+)doping,a maximum open-circuit voltage(VOC)of 18.1 V is obtained when Sm^(3+)content is 0.75%,which is much larger than its bandgap(Eg).The mechanism of this large VOC originates from the multiple positive effects induced by the small-size domain,where decreasing domain size enhances ferroelectric polarization and net interface barrier potential,leading to a large driving electric field.Moreover,the APV effect exhibits a giant temperature sensitivity due to the dramatic evolution of small-size domain in the temperature field.This work sheds light on the exploration of ferroelectrics with APV effect and inspires their future high-performance optoelectronic device applications.展开更多
基金supported by the Natural Science Foundation of China(51702169 and 12264036)the Natural Science Foundation of Inner Mongolia(2021JQ06)+2 种基金the Scientific and Technological Development Foundation of the Central Guidance Local(2021ZY0008)the Youth Science and Technology Talents Project of Inner Mongolia(NJYT22061)the“Light of the West”talent training program of Chinese Academy of Sciences.
文摘The use of ferroelectric materials is believed to be a viable way to construct self-powered photodetectors based on the ferroelectric photovoltaic effect.However,the low photocurrent density of ferroelectric materials is a serious drawback that restricts their photo-detection applications.Herein,ultrahigh photodetection performances are achieved in hexagonal YbMnO_(3)-based self-powered photodetectors by optimizing the macroscopic polarization.The responsivity(R)and detectivity(D^(*))can reach 0.18/0.15 A W−1 and 6.73×10^(11)/5.76×10^(11) Jones under monochromatic light with a wavelength of 365/700 nm when the YbMnO_(3) thin film[YbMnO_(3)(1040)]is sintered at 1040℃.These excellent photo-detection performances are attributed to the high short-circuit current density which reaches 10.9 mA cm^(−2) under 1 sun illumination.A systematic structure and photo-electric characteristic analysis suggests that the formation of a strong domain and the distortion of the crystal structure lead to an enhanced macroscopic polarization in YbMnO_(3)(1040)without changing the bandgap.The enhanced polarization causes a ripple positive effect,which increases the driving force of photo-generated carrier separation and restrains recombination,leading to a high dissociation efficiency.This work demonstrates that the ferroelectric YbMnO_(3) thin film has great potential in the photo-detection field.
基金The authors acknowledge the support from the Natural Science Foundation of China(12264036)the Natural Science Foundation of Inner Mongolia(2021JQ06)+2 种基金Scientific and Technological Development Foundation of the Central Guidance Local(2021ZY0008)Youth Science and Technology Talents Project of Inner Mongolia(NJYT22061)“Light of the West”talent training program of Chinese Academy of Sciences,Talent Development Fund of Inner Mongolia and Grassland Talents of Inner Mongolia.
文摘The anomalous photovoltaic(APV)effect is promising for high-performance ferroelectric materials and devices in photoelectric applications.However,it is a challenge how to tune the APV effect by utilizing the characteristic structure of ferroelectrics.Here,a domain engineering strategy is proposed to enhance the APV effect in lead-free 0.88(Na_(0.5)Bi_(0.5)TiO_(3))-0.12(Ba_(1–1.5x)S_(mx)TiO_(3))(NBT-BST)ferroelectric ceramics.By tuning the domain size based on Sm^(3+)doping,a maximum open-circuit voltage(VOC)of 18.1 V is obtained when Sm^(3+)content is 0.75%,which is much larger than its bandgap(Eg).The mechanism of this large VOC originates from the multiple positive effects induced by the small-size domain,where decreasing domain size enhances ferroelectric polarization and net interface barrier potential,leading to a large driving electric field.Moreover,the APV effect exhibits a giant temperature sensitivity due to the dramatic evolution of small-size domain in the temperature field.This work sheds light on the exploration of ferroelectrics with APV effect and inspires their future high-performance optoelectronic device applications.
