H_(2)O_(2)has been widely applied in the fields of chemical synthesis,medical sterilization,pollutant removal,etc.,due to its strong oxidizing property and the avoidable secondary pollution.Despite of the enhanced per...H_(2)O_(2)has been widely applied in the fields of chemical synthesis,medical sterilization,pollutant removal,etc.,due to its strong oxidizing property and the avoidable secondary pollution.Despite of the enhanced performance for H_(2)O_(2)generation over g-C_(3)N_(4)semiconductors through promoting the separation of photo-generated charge carriers,the effect of migration orientation of charge carriers is still ambiguous.For this emotion,surface modification of g-C_(3)N_(4)was employed to adjust the migration orientation of charge carriers,in order to investigate systematically its effect on the performance of H_(2)O_(2)generation.It was found that ultrathin g-C_(3)N_(4)(UCN)modified by boron nitride(BN),as an effective hole-attract agent,demonstrated a significantly enhanced performance.Particularly,for the optimum UCN/BN-40%catalyst,4.0-fold higher yield of H_(2)O_(2)was obtained in comparison with the pristine UCN.As comparison,UCN modified by carbon dust demonstrated a completely opposite tendency.The remarkably improved performance over UCN/BN was ascribed to the fact that more photo-generated electrons were remained inside of triazine structure of g-C_(3)N_(4),leading to the formation of larger amount of 1,4-endoxide.It is anticipated that our work could provide new insights for the design of photocatalyst with significantly improved performance for H_(2)O_(2)generation.展开更多
基金supported by the National Natural Science Foundation of China(No.21906132)Department of Science and Technology of Sichuan Province(Nos.2020YFG0158 and 2020YFH0162)the Engineering Research Center for the Development of Farmland Ecosystem Service Functions,Sichuan Province Institutions of Higher Education.
文摘H_(2)O_(2)has been widely applied in the fields of chemical synthesis,medical sterilization,pollutant removal,etc.,due to its strong oxidizing property and the avoidable secondary pollution.Despite of the enhanced performance for H_(2)O_(2)generation over g-C_(3)N_(4)semiconductors through promoting the separation of photo-generated charge carriers,the effect of migration orientation of charge carriers is still ambiguous.For this emotion,surface modification of g-C_(3)N_(4)was employed to adjust the migration orientation of charge carriers,in order to investigate systematically its effect on the performance of H_(2)O_(2)generation.It was found that ultrathin g-C_(3)N_(4)(UCN)modified by boron nitride(BN),as an effective hole-attract agent,demonstrated a significantly enhanced performance.Particularly,for the optimum UCN/BN-40%catalyst,4.0-fold higher yield of H_(2)O_(2)was obtained in comparison with the pristine UCN.As comparison,UCN modified by carbon dust demonstrated a completely opposite tendency.The remarkably improved performance over UCN/BN was ascribed to the fact that more photo-generated electrons were remained inside of triazine structure of g-C_(3)N_(4),leading to the formation of larger amount of 1,4-endoxide.It is anticipated that our work could provide new insights for the design of photocatalyst with significantly improved performance for H_(2)O_(2)generation.
