Research progresses on Cherenkov and transit-time high-power microwave(HPM)sources in National University of Defense Technology(NUDT)of China are presented.The research issues are focused on the following aspects.The ...Research progresses on Cherenkov and transit-time high-power microwave(HPM)sources in National University of Defense Technology(NUDT)of China are presented.The research issues are focused on the following aspects.The pulse-shortening phenomenon in O-type Cerenkov HPM devices is suppressed.The compact coaxial relativistic backward-wave oscillators(RBWOs)at low bands are developed.The power efficiency in M-Type HPM tubes without guiding magnetic field increased.The power capacities and power efficiencies in the triaxial klystron amplifier(TKA)and relativistic transit-time oscillator(TTO)at higher frequencies increased.In experiments,some exciting results were obtained.The X-band source generated 2 GW microwave power with a pulse duration of 110 ns in 30 Hz repetition mode.Both L-and P-band compact RBWOs generated over 2 GW microwave power with a power efficiency of over 30%.There is approximately a 75% decline of the volume compared with that of conventional RBWO under the same power capacity conditions.A 1.755 GHz MILO produced 3.1 GW microwave power with power efficiency of 10.4%.A 9.37 GHz TKA produced the 240 MW microwave power with the gain of 34 dB.A 14.3 GHz TTO produced 1 GW microwave power with power efficiency of 20%.展开更多
To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insul...To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.展开更多
基金supported by the National Natural Science Funds Fund of China under Grant No.11505288Provincial Natural Science Foundation of Hunanscientific effort project of NUDT.
文摘Research progresses on Cherenkov and transit-time high-power microwave(HPM)sources in National University of Defense Technology(NUDT)of China are presented.The research issues are focused on the following aspects.The pulse-shortening phenomenon in O-type Cerenkov HPM devices is suppressed.The compact coaxial relativistic backward-wave oscillators(RBWOs)at low bands are developed.The power efficiency in M-Type HPM tubes without guiding magnetic field increased.The power capacities and power efficiencies in the triaxial klystron amplifier(TKA)and relativistic transit-time oscillator(TTO)at higher frequencies increased.In experiments,some exciting results were obtained.The X-band source generated 2 GW microwave power with a pulse duration of 110 ns in 30 Hz repetition mode.Both L-and P-band compact RBWOs generated over 2 GW microwave power with a power efficiency of over 30%.There is approximately a 75% decline of the volume compared with that of conventional RBWO under the same power capacity conditions.A 1.755 GHz MILO produced 3.1 GW microwave power with power efficiency of 10.4%.A 9.37 GHz TKA produced the 240 MW microwave power with the gain of 34 dB.A 14.3 GHz TTO produced 1 GW microwave power with power efficiency of 20%.
基金supported in part by the Huxiang Youth Talent Support Program(No.2020RC3030)in part by the Foundation of State Key Laboratory of Pulsed Power Laser Technology(Nos.SKL2021ZR02 and SKL2021KF05)。
文摘To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.
