Twist,the very degree of freedom in van der Waals heterostructures,offers a compelling avenue to manipulate and tailor their electrical and optical characteristics.In particular,moirépatterns in twisted homobilay...Twist,the very degree of freedom in van der Waals heterostructures,offers a compelling avenue to manipulate and tailor their electrical and optical characteristics.In particular,moirépatterns in twisted homobilayer transition metal dichalcogenides(TMDs)lead to zone folding and miniband formation in the resulting electronic bands,holding the promise to exhibit inter-layer excitonic optical phenomena.Although some experiments have shown the existence of twist-angle-dependent intra-and inter-layer excitons in twisted MoSe2 homobilayers,electrical control of the interlayer excitons in MoSe_(2) is relatively under-explored.Here,we show the signatures of the moiréeffect on intralayer and interlayer excitons in 2H-stacked twisted MoSe2 homobilayers.Doping-and electric field-dependent photoluminescence mea-surements at low temperatures give evidence of the momentum-direct K-K intralayer excitons,and the momentum-indirect Г-K and Г-Q interlayer excitons.Our results suggest that twisted MoSe_(2) homobilayers are an intriguing platform for engineering interlayer exciton states,which may shed light on future atomically thin optoelectronic applications.展开更多
基金supported by the National Key R&D Program of China(No.2023YFF1500600)the National Natural Science Foun-dation of China(Nos.12004259,12204287)+3 种基金China Postdoc-toral Science Foundation(Grant No.2022M723215)Zheng Vitto Han acknowledges the support of the Fund for Shanxi“1331 Project”Key Subjects Construction,and the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302003)Kenji Watanabe and Takashi Taniguchi acknowledge support from the JSPS KAKENHI(Grant Nos.20H00354 and 23H02052)the World Premier International Research Center Initiative(WPI),MEXT,Japan.
文摘Twist,the very degree of freedom in van der Waals heterostructures,offers a compelling avenue to manipulate and tailor their electrical and optical characteristics.In particular,moirépatterns in twisted homobilayer transition metal dichalcogenides(TMDs)lead to zone folding and miniband formation in the resulting electronic bands,holding the promise to exhibit inter-layer excitonic optical phenomena.Although some experiments have shown the existence of twist-angle-dependent intra-and inter-layer excitons in twisted MoSe2 homobilayers,electrical control of the interlayer excitons in MoSe_(2) is relatively under-explored.Here,we show the signatures of the moiréeffect on intralayer and interlayer excitons in 2H-stacked twisted MoSe2 homobilayers.Doping-and electric field-dependent photoluminescence mea-surements at low temperatures give evidence of the momentum-direct K-K intralayer excitons,and the momentum-indirect Г-K and Г-Q interlayer excitons.Our results suggest that twisted MoSe_(2) homobilayers are an intriguing platform for engineering interlayer exciton states,which may shed light on future atomically thin optoelectronic applications.
