Magnetron-sputtered MoS_(2) has applications in piezoresistive functional materials research owing to its unique nanostructure.However,the controlled incorporation of sulfur vacancies and realization of en-hanced piez...Magnetron-sputtered MoS_(2) has applications in piezoresistive functional materials research owing to its unique nanostructure.However,the controlled incorporation of sulfur vacancies and realization of en-hanced piezoresistive performance remain significant challenges.In this work,the direct growth of large-area MoS_(2) films with tunable sulfur vacancy concentrations was successfully achieved via magnetron sputtering at various temperatures.Microstructural analysis revealed that the application of strain al-tered the number of conductive channels between the vertical MoS_(2) nanosheets,changing the measured resistance and leading to excellent piezoresistive properties.More importantly,the unsaturated electrons due to the sulfur vacancies increased the in-plane carrier concentration of the MoS_(2)nanosheets.A de-position temperature of 50℃afforded the highest concentrations of sulfur vacancies and carriers.These MoS_(2)films possessed a carrier concentration of 6.58×10^(17)cm^(−3),which was 40.9%higher than that ob-tained at 150°C,and displayed superior piezoresistive performance.The films exhibited high gage factors of 2.66 and 23.22 under tensile and compressive strain of≤0.29%,respectively.These values were 118%and 323%higher,respectively,than those obtained for films deposited at 150°C.This work provides an effective route for modulating and mass producing MoS_(2)-based piezoresistive electronic devices.展开更多
基金supported by the National Natural Science Foundation of China(No.U20A201293)the Ningbo Ma-jor Special Project“Science and Technology Innovation 2025”(No.2020Z023),and the National Key Research and Development Pro-gram(No.2021YFB3201100).
文摘Magnetron-sputtered MoS_(2) has applications in piezoresistive functional materials research owing to its unique nanostructure.However,the controlled incorporation of sulfur vacancies and realization of en-hanced piezoresistive performance remain significant challenges.In this work,the direct growth of large-area MoS_(2) films with tunable sulfur vacancy concentrations was successfully achieved via magnetron sputtering at various temperatures.Microstructural analysis revealed that the application of strain al-tered the number of conductive channels between the vertical MoS_(2) nanosheets,changing the measured resistance and leading to excellent piezoresistive properties.More importantly,the unsaturated electrons due to the sulfur vacancies increased the in-plane carrier concentration of the MoS_(2)nanosheets.A de-position temperature of 50℃afforded the highest concentrations of sulfur vacancies and carriers.These MoS_(2)films possessed a carrier concentration of 6.58×10^(17)cm^(−3),which was 40.9%higher than that ob-tained at 150°C,and displayed superior piezoresistive performance.The films exhibited high gage factors of 2.66 and 23.22 under tensile and compressive strain of≤0.29%,respectively.These values were 118%and 323%higher,respectively,than those obtained for films deposited at 150°C.This work provides an effective route for modulating and mass producing MoS_(2)-based piezoresistive electronic devices.
