Alloy engineering,with its ability to tune the electronic band structure,is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional(2D)semiconductors.However,synth...Alloy engineering,with its ability to tune the electronic band structure,is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional(2D)semiconductors.However,synthesizing metal-site substitution alloys remains challenging due to the low reactivity of metal precursors and the tendency for spatial phase separation during high-temperature growth.Here,we report the preparation of a high-quality metal-site substitution alloy,Zn_(0.167)Sn_(0.833)S_(2),via the chemical vapor transport method,which exhibits excellent photoresponsivity and enhanced electrical transport properties.Comprehensive characterization techniques,including Raman spectroscopy,x-ray photoelectron spectroscopy(XPS),and electron microscopy,unambiguously confirm the uniform Zn substitution in the as-prepared Zn_(0.167)Sn_(0.833)S_(2) alloy.Furthermore,the photodetector based on the Zn_(0.167)Sn_(0.833)S_(2) alloy demonstrated a high on/off ratio of 51 under white light,a wide spectral response range from 350 nm to 900 nm,and a broad dynamic power range of 80 dB under 638-nm illumination.In terms of transport properties,field-effect transistors(FETs)based on Zn_(0.167)Sn_(0.833)S_(2) achieved a carrier mobility of 6.5 cm^(2)·V^(-1)·s^(-1),which is six times higher than that of SnS_(2).This alloy semiconductor showcases significantly enhanced electronic and optoelectronic properties,offering great potential for the development of high-resolution photodetection technologies.展开更多
In recent years,molybdenum disulfide(Mo S2)has exhibited remarkable electrical,mechanical and optical properties because of its ultrathin body thickness,flexibility and direct bandgap for photo response[1].
基金supported by the Beijing Natural Science Foundation(Grant No.Z220005)the National Key Research and Development Program of China(Grant Nos.2022YFB3606902 and 2022YFA1405600)+1 种基金the National Natural Science Foundation of China(Grant No.12274456)the Opening Project of the Laboratory of Microelectronic Devices&Integrated Technology,Chinese Academy of Sciences(CAS),Institute of Microelectronics,Chinese Academy of Sciences.
文摘Alloy engineering,with its ability to tune the electronic band structure,is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional(2D)semiconductors.However,synthesizing metal-site substitution alloys remains challenging due to the low reactivity of metal precursors and the tendency for spatial phase separation during high-temperature growth.Here,we report the preparation of a high-quality metal-site substitution alloy,Zn_(0.167)Sn_(0.833)S_(2),via the chemical vapor transport method,which exhibits excellent photoresponsivity and enhanced electrical transport properties.Comprehensive characterization techniques,including Raman spectroscopy,x-ray photoelectron spectroscopy(XPS),and electron microscopy,unambiguously confirm the uniform Zn substitution in the as-prepared Zn_(0.167)Sn_(0.833)S_(2) alloy.Furthermore,the photodetector based on the Zn_(0.167)Sn_(0.833)S_(2) alloy demonstrated a high on/off ratio of 51 under white light,a wide spectral response range from 350 nm to 900 nm,and a broad dynamic power range of 80 dB under 638-nm illumination.In terms of transport properties,field-effect transistors(FETs)based on Zn_(0.167)Sn_(0.833)S_(2) achieved a carrier mobility of 6.5 cm^(2)·V^(-1)·s^(-1),which is six times higher than that of SnS_(2).This alloy semiconductor showcases significantly enhanced electronic and optoelectronic properties,offering great potential for the development of high-resolution photodetection technologies.
基金supported by the National Key Research and Development Program(Grant Nos.2018YFA0208503,2017YFB0701703,2016YFA020-1802,and 2016YFA0201802)the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,the Beijing Training Project for the Leading Talents in S&T(Grant No.Z151100000315008)+1 种基金the National Natural Science Foundation of China(Grant Nos.61725404,61890944,61574166,61874134,61804170,61221004,61404164,61821091,and61888102)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000,and XDB12030400)
文摘In recent years,molybdenum disulfide(Mo S2)has exhibited remarkable electrical,mechanical and optical properties because of its ultrathin body thickness,flexibility and direct bandgap for photo response[1].
