We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn th...We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 51672171 and 61604094the Natural Science Foundation of Shanghai under Grant No 14ZR1418300+2 种基金the National Key Basic Research Program of China under Grant No 2015CB921600the Eastern Scholar Program from the Shanghai Municipal Education Commissionthe Fok Ying Tung Education Foundation
文摘We report an effective method to improve the formation of nickel stanogermanide（Ni Ge Sn） by the incorporation of a platinum（Pt） interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.
