Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques.Samples cut from the head(T04)and tail(W02)regions of a crystal ingot show distinct differe...Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques.Samples cut from the head(T04)and tail(W02)regions of a crystal ingot show distinct differences in Te inclusion distribution.Obvious difference is not observed in Fourier transform infrared(FTIR)spectra,UV-Vis-NIR transmittance spectra,and I-V measurements.However,carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current(LBIC)measurements.Low temperature photoluminescence(PL)measurement presents sharp emission peaks of D^(0)X and A^(0)X,and relatively large peak of D^(0)X(or A^(0)X)/Dcomplex for T04,indicating a better crystalline quality.Thermally stimulated current(TSC)spectrum shows higher density of shallow point defects,i.e.,Cd vacancies,In^(+)_(Cd),etc.,in W02 sample,which could be responsible for the deterioration of electron mobility.展开更多
基金Project supported by the National Natural Science Foundations of China(Grant Nos.51502244,51702271,U1631116,and 51372205)the National Key Research and Development Program of China(Grant Nos.2016YFF0101301 and 2016YFE0115200)+2 种基金the Fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University,China(Grant No.SKLSP201741)the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.2016KJXX-09)the Fundamental Research Funds for the Central Universities,China(Grant No.3102015BJ(II)ZS014)
文摘Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques.Samples cut from the head(T04)and tail(W02)regions of a crystal ingot show distinct differences in Te inclusion distribution.Obvious difference is not observed in Fourier transform infrared(FTIR)spectra,UV-Vis-NIR transmittance spectra,and I-V measurements.However,carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current(LBIC)measurements.Low temperature photoluminescence(PL)measurement presents sharp emission peaks of D^(0)X and A^(0)X,and relatively large peak of D^(0)X(or A^(0)X)/Dcomplex for T04,indicating a better crystalline quality.Thermally stimulated current(TSC)spectrum shows higher density of shallow point defects,i.e.,Cd vacancies,In^(+)_(Cd),etc.,in W02 sample,which could be responsible for the deterioration of electron mobility.
