The more severe phonon-phonon scattering in gallium oxide(Ga_(2)O_(3)) crystals leads to lower thermal conductivity compared to most other semiconductor materials. To address this issue and enhance the heat dissipatio...The more severe phonon-phonon scattering in gallium oxide(Ga_(2)O_(3)) crystals leads to lower thermal conductivity compared to most other semiconductor materials. To address this issue and enhance the heat dissipation in Ga_(2)O_(3) devices, one practical solution is to integrate Ga_(2)O_(3) with a highly thermally conductive substrate, such as SiC and Si. Currently,there are three methods employed for the heterogeneous integration of Ga_(2)O_(3) with highly thermally conductive substrates:mechanical exfoliation, hetero-epitaxy growth, and ion-cutting technique.展开更多
The ability to control nonclassical light emission from a single quantum emitter by an integrated cavity may unleash new perspectives for integrated photonic quantum applications.However,coupling a single quantum emit...The ability to control nonclassical light emission from a single quantum emitter by an integrated cavity may unleash new perspectives for integrated photonic quantum applications.However,coupling a single quantum emitter to cavity within photonic circuitry towards creation of the Purcell-enhanced single-photon emission is elusive due to the complexity of integrating active devices in low-loss photonic circuits.Here we demonstrate a hybrid micro-ring resonator(HMRR)coupled with self-assembled quantum dots(QDs)for cavity-enhanced deterministic single-photon emission.The HMRR cavity supports whispering-gallery modes with quality factors up to 7.8×103.By further introducing a micro-heater,we show that the photon emission of QDs can be locally and dynamically tuned over one free spectral ranges of the HMRR(~4 nm).This allows precise tuning of individual QDs in resonance with the cavity modes,thereby enhancing single-photon emission with a Purcell factor of about 4.9.Our results on the hybrid integrated cavities coupled with two-level quantum emitters emerge as promising devices for chip-based scalable photonic quantum applications.展开更多
Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications....Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications.While significant advancements have been made in Ga_(2)O_(3)material and device research,there are still challenges related to its ultra-low thermal conductivity and the lack of effective p-type doping methods.These limitations hinder the fabrication of complex device structures and the enhancement of device performance.This review aims to provide an introduction to the research development of Ga_(2)O_(3)heterogeneous and heterojunction power devices based on heterogeneous integration technology.By utilizing ion-cutting and wafer bonding techniques,heterogeneous substrates with high thermal conductivity have been realized,offering a viable solution to overcome the thermal limitations of Ga_(2)O_(3).Compared to Ga_(2)O_(3)bulk devices,Ga_(2)O_(3)devices fabricated on heterogeneous substrates integrated with SiC or Si exhibit superior thermal properties.Power diodes and superjunction transistors based on p-NiO/n-Ga_(2)O_(3)heterojunctions on heterogeneous substrates have demonstrated outstanding electrical characteristics,presenting a feasible method for the development of bipolar devices.The technologies of heterogeneous integration and heterojunction address critical issues related to Ga_(2)O_(3),thereby advancing the commercial applications of Ga_(2)O_(3)devices in power and RF fields.By integrating Ga_(2)O_(3)with other materials and leveraging heterojunction interfaces,researchers and engineers have made significant progress in improving device performance and overcoming limitations.These advancements pave the way for the wider adoption of Ga_(2)O_(3)-based devices in various power and RF applications.展开更多
This paper presents the design,fabrication,and characterization of a high-performance heterogeneous silicon on insulator(SOI)/thin film lithium niobate(TFLN)electro-optical modulator based on wafer-scale direct bondin...This paper presents the design,fabrication,and characterization of a high-performance heterogeneous silicon on insulator(SOI)/thin film lithium niobate(TFLN)electro-optical modulator based on wafer-scale direct bonding followed by ion-cut technology.The SOI wafer has been processed by an 8 inch standard fabrication line and cut into 6 inch for direct bonding with TFLN.The hybrid SOI/LN electro-optical modulator operated at the wavelength of 1.55μmis composed of couplers on the Si layer and aMach-Zehnder interferometer(MZI)structure on theLNlayer.The fabricated device exhibits a stable value of the product of half-wave voltage and length(V_(π)L)of around 2.9 V·cm.It shows a good low-frequency electro-optic response flatness and supports 96 Gbit/s data transmission for the NRZ format and 192 Gbit/s data transmission for the PAM-4 format.展开更多
The monocrystalline LiNbO_(3)(LN)and LiTaO_(3)(LT)plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication.LN and LT thin films are usually...The monocrystalline LiNbO_(3)(LN)and LiTaO_(3)(LT)plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication.LN and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator(POI)substrate.The ion implantation is a key process and the implantation-induced strain is essential for the layer transfer.Here,we reported the strain profile of ion implanted rotated Y-cut LN and LT.The ion implantation generates the out-of-plane tensile strain of the sample surface and(006)plane,while both the tensile and compressive strain are observed on the(030)plane.The implanted ions redistributed due to the anisotropy of LN and LT,and induce the main tensile normal to the(006)plane.Meanwhile,the(030)planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.展开更多
Photoelectrochemical(PEC)water-splitting using solar energy holds great promise for the renewable energy future,and a key challenge in the development of industry viable PEC devices is the unavailability of high-effic...Photoelectrochemical(PEC)water-splitting using solar energy holds great promise for the renewable energy future,and a key challenge in the development of industry viable PEC devices is the unavailability of high-efficient photoanodes.Herein,we designed a TiO_(2) model photocatalyst with nano-groove pattern and different surface orientation using low-energy Ar+irradiation and photoetching of TiO_(2),and significantly improved the intrinsic activity for PEC water oxidation.High-resolution transmission electron microscopy directly manifests that the grooves consist of highly stepped surface with<110>steps and well-crystallized.Transient absorption spectroscopy reveals the groove surface that allows for increased recovery lifetime,which ensures promoted electron-hole separation efficiency.Surface photovoltage directly shows the carrier separation and transportation behaviors,verified by selective photodeposition,demonstrating the groove surface on TiO_(2) contributes to electron-hole separation.This work proposes an efficient and scalable photoanode strategy,which potentially can open new opportunities for achieving efficient PEC water oxidation performance.展开更多
A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics.Despite the impressive advances that have be...A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics.Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot(QD)lasers,extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult.In this study,we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si(100)(InPOS)heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate.This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth,namely lattice and domain mismatches.Using this approach,we achieved state-of-the-art performance of the electrically-pumped,continuouswave(CW)1.55-μm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm^(-2),and output power exceeding 155mW per facet without facet coating in CW mode.CW lasing at 120℃ and pulsed lasing at over 130℃ were achieved.This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.展开更多
Strain and stress were simulated using finite element method(FEM)for threeⅢ-V-on-Insulator(Ⅲ-VOI)structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for o...Strain and stress were simulated using finite element method(FEM)for threeⅢ-V-on-Insulator(Ⅲ-VOI)structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for optoelectronic devices on Si.The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy.Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness.The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk.The simulated results reveal thermal stress on Al2O3 over 1 GPa,which is much higher than its critical stress for interfacial fracture.InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.展开更多
Protein liquid-liquid phase separation(LLPS),a pivotal phenomenon intricately linked to cellular processes,is regulated by various other proteins.However,there is still a lack of high-throughput methods for screening ...Protein liquid-liquid phase separation(LLPS),a pivotal phenomenon intricately linked to cellular processes,is regulated by various other proteins.However,there is still a lack of high-throughput methods for screening protein regulators of LLPS in target proteins.Here,we developed a CRISPR/Cas9-based screening method to identify protein phase separation regulators by integrating bimolecular fluorescence complementation(BiFC)and fluorescence-activated cell sorting(FACS).Using this newly developed method,we screened the RNA-binding proteins that regulate PABPN1 phase separation and identified the tumor suppressor QKI as a promoter of PABPN1 phase separation.Furthermore,QKI exhibits decreased expression levels and diminished nuclear localization in colorectal cancer cells,resulting in reduced PABPN1 phase separation,which,in turn,promotes alternative polyadenylation(APA),cell proliferation,and migration in colorectal cancer.展开更多
Chip-based soliton frequency microcombs combine compact size,broad bandwidth,and high coherence,presenting a promising solution for integrated optical telecommunications,precision sensing,and spectroscopy.Recent progr...Chip-based soliton frequency microcombs combine compact size,broad bandwidth,and high coherence,presenting a promising solution for integrated optical telecommunications,precision sensing,and spectroscopy.Recent progress in ferroelectric thin films,particularly thin-film lithium niobate(LiNbO_(3))and thin-film lithium tantalate(LiTaO_(3)),has significantly advanced electro-optic(EO)modulation and soliton microcombs generation,leveraging their strong third-order nonlinearity and high Pockels coefficients.However,achieving soliton frequency combs in X-cut ferroelectric materials remains challenging due to the competing effects of thermo-optic and photorefractive phenomena.These issues hinder the simultaneous realization of soliton generation and high-speed EO modulation.Here,following the thermal-regulated carrier behavior and auxiliary-laser-assisted approach,we propose a convenient mechanism to suppress both photorefractive and thermal dragging effects at once,and implement a facile method for soliton formation and its longterm stabilization in integrated X-cut LiTaO_(3) microresonators for the first time,to the best of our knowledge.The resulting mode-locked states exhibit robust stability against perturbations,enabling new pathways for fully integrated photonic circuits that combine Kerr nonlinearity with high-speed EO functionality.展开更多
The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal c...The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.展开更多
Integrated photonic quantum circuits(IPQCs)have attracted increasing attention in recent years due to their widespread applications in quantum information science.While the most envisioned quantum technologies such as...Integrated photonic quantum circuits(IPQCs)have attracted increasing attention in recent years due to their widespread applications in quantum information science.While the most envisioned quantum technologies such as quantum communications,quantum computer and quantum simulations have placed a strict constraint on the scalability of chip-integrated quantum light sources.By introducing sizeconfined nanostructures or crystal imperfections,low-dimensional semiconductors have been broadly explored as chip-scale deterministic single-photon sources(SPSs).Thus far a variety of chip-integrated deterministic SPSs have been investigated across both monolithic and hybrid photonic platforms,including molecules,quantum dots,color centers and two-dimensional materials.With the rapid development of the chip-scale generation of single photons with deterministic quantum emitters,the field of IPQCs has raised new challenges and opportunities.In this paper,we highlight recent progress in the development of waveguide-coupled deterministic SPSs towards scalable IPQCs,and review the post-growth tuning techniques that are specifically developed to engineer the optical properties of these WG-coupled SPSs.Future prospects on stringent requirement for the quantum engineering toolbox in the burgeoning field of integrated photonics are also discussed.展开更多
In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of...In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate.展开更多
The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable ob...The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies.Here,photonic microresonators with a mean Q factor of 6.75×10^(6)were demonstrated on a 4H-silicon-carbide-on-insulator(4H-SiCOI)platform,as determined by a statistical analysis of tens of resonances.Using these devices,broadband frequency conversions,including second-,third-,and fourth-harmonic generations have been observed.Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time,to the best of our knowledge.Meanwhile,by engineering the dispersion properties of the SiC microresonator,we have achieved broadband Kerr frequency combs covering from 1300 to 1700nm.Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.展开更多
Many breakthroughs in technologies are closely associated with the deep understanding and development of new material platforms.As the main material used in microelectronics,Si also plays a leading role in the develop...Many breakthroughs in technologies are closely associated with the deep understanding and development of new material platforms.As the main material used in microelectronics,Si also plays a leading role in the development of integrated photonics.The indirect bandgap,absence ofχ(2)nonlinearity and the parasitic nonlinear absorptions at the telecom band of Si imposed technological bottlenecks for further improving the performances and expanding the functionalities of Si microcavities in which the circulating light intensity is dramatically amplified.The past two decades have witnessed the burgeoning of the novel material platforms that are compatible with the complementary metal-oxide-semiconductor(COMS)process.In particular,the unprecedented optical properties of the emerging materials in the thin film form have resulted in revolutionary progress in microcavity photonics.In this review article,we summarize the recently developed material platforms for integrated photonics with the focus on chip-scale microcavity devices.The material characteristics,fabrication processes and device applications have been thoroughly discussed for the most widely used new material platforms.We also discuss open challenges and opportunities in microcavity photonics,such as heterogeneous integrated devices,and provide an outlook for the future development of integrated microcavities.展开更多
β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting process.Enhancement(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thic...β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting process.Enhancement(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thickness(Tch).E-mode GaOISi transistor with a Tchof 15 nm achieves a high threshold voltage VTHof^8 V.With the same T increase,GaOISi transistors demonstrate more stable ON-current IONand OFF-current IOFFperformance compared to the reported devices on bulk Ga2O3 wafer.Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C,respectively.展开更多
Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication,sensing,and metrology applications.The technology translation from laboratory demonstrations to real-worl...Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication,sensing,and metrology applications.The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible,such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume.Silicon nitride has become the leading CMOS platform for integrated soliton devices,however,it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation.Other materials have emerged such as AlN,LiNbO_(3),AlGaAs and GaP that exhibit simultaneous second-and third-order nonlinearities.Here,we show that silicon carbide(SiC)--already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics,MOSFET,and MEMS due to its wide bandgap properties,excellent mechanical properties,piezoelectricity and chemical inertia--is a new competitive CMOS-compatible platform for nonlinear photonics.High-quality-factor microresonators(Q=4×10^(6))are fabricated on 4H-SiC-on-insulator thin films,where a single soliton microcomb is generated.In addition,we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC.Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.展开更多
Generally,a superconducting nanowire single-photon detector(SNSPD)is composed of wires with a typical width of∼100 nm.Recent studies have found that superconducting strips with a micrometer-scale width can also detec...Generally,a superconducting nanowire single-photon detector(SNSPD)is composed of wires with a typical width of∼100 nm.Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons.Compared with the SNSPD covering the same area,the superconducting microstrip single-photon detector(SMSPD)has smaller kinetic inductance,higher working current,and lower requirements in fabrication accuracy,providing potential applications in the development of ultralarge active area detectors.However,the study of SMSPD is still in its infancy,and the realization of its high-performance and practical use remains an open question.This study demonstrates a NbN SMSPD with a nearly saturated system detection efficiency(SDE)of∼92.2%at a dark count rate of∼200 cps,a polarization sensitivity of∼1.03,and a minimum timing jitter of∼48 ps at the telecom wavelength of 1550 nm when coupled with a single-mode fiber and operated at 0.84 K.Furthermore,the detector’s SDE is over 70%when operated at a 2.1 K closed-cycle cryocooler.展开更多
The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realiz...The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l platform.The cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength range.Moreover,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.展开更多
文摘The more severe phonon-phonon scattering in gallium oxide(Ga_(2)O_(3)) crystals leads to lower thermal conductivity compared to most other semiconductor materials. To address this issue and enhance the heat dissipation in Ga_(2)O_(3) devices, one practical solution is to integrate Ga_(2)O_(3) with a highly thermally conductive substrate, such as SiC and Si. Currently,there are three methods employed for the heterogeneous integration of Ga_(2)O_(3) with highly thermally conductive substrates:mechanical exfoliation, hetero-epitaxy growth, and ion-cutting technique.
基金support from National Key R&D Program of China(2022YFA1404604)Chinese Academy of Sciences Project for Young Scientists in Basic Research(No.YSBR-112),Science and Technology Commission of Shanghai Municipality(16ZR1442600,20JC1416200)+6 种基金National Natural Science Foundation of China(Nos.12074400,U1732268,62293521,61874128,61851406,11774326 and 11705262)the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB0670303)Shanghai Science and Technology Innovation Action Plan Program(20JC1416200,22JC1403300)Frontier Science Key Program of Chinese Academy of Sciences(No.QYZDY-SSW-JSC032),Innovation Program for Quantum Science and Technology(No.2021ZD0300204)Shanghai Municipal Science and Technology Major Project(No.2019SHZDZX01)Autonomous deployment project of State Key Laboratory of Materials for Integrated Circuits(No.SKLJCZ2024-B03)State Key Laboratory of Advanced Optical Communication Systems and Networks(No.2024GZKF11).
文摘The ability to control nonclassical light emission from a single quantum emitter by an integrated cavity may unleash new perspectives for integrated photonic quantum applications.However,coupling a single quantum emitter to cavity within photonic circuitry towards creation of the Purcell-enhanced single-photon emission is elusive due to the complexity of integrating active devices in low-loss photonic circuits.Here we demonstrate a hybrid micro-ring resonator(HMRR)coupled with self-assembled quantum dots(QDs)for cavity-enhanced deterministic single-photon emission.The HMRR cavity supports whispering-gallery modes with quality factors up to 7.8×103.By further introducing a micro-heater,we show that the photon emission of QDs can be locally and dynamically tuned over one free spectral ranges of the HMRR(~4 nm).This allows precise tuning of individual QDs in resonance with the cavity modes,thereby enhancing single-photon emission with a Purcell factor of about 4.9.Our results on the hybrid integrated cavities coupled with two-level quantum emitters emerge as promising devices for chip-based scalable photonic quantum applications.
基金supported by grants from the National Natural Science Foundation of China(62293522,62293521,62204255 and 62234007).
文摘Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications.While significant advancements have been made in Ga_(2)O_(3)material and device research,there are still challenges related to its ultra-low thermal conductivity and the lack of effective p-type doping methods.These limitations hinder the fabrication of complex device structures and the enhancement of device performance.This review aims to provide an introduction to the research development of Ga_(2)O_(3)heterogeneous and heterojunction power devices based on heterogeneous integration technology.By utilizing ion-cutting and wafer bonding techniques,heterogeneous substrates with high thermal conductivity have been realized,offering a viable solution to overcome the thermal limitations of Ga_(2)O_(3).Compared to Ga_(2)O_(3)bulk devices,Ga_(2)O_(3)devices fabricated on heterogeneous substrates integrated with SiC or Si exhibit superior thermal properties.Power diodes and superjunction transistors based on p-NiO/n-Ga_(2)O_(3)heterojunctions on heterogeneous substrates have demonstrated outstanding electrical characteristics,presenting a feasible method for the development of bipolar devices.The technologies of heterogeneous integration and heterojunction address critical issues related to Ga_(2)O_(3),thereby advancing the commercial applications of Ga_(2)O_(3)devices in power and RF fields.By integrating Ga_(2)O_(3)with other materials and leveraging heterojunction interfaces,researchers and engineers have made significant progress in improving device performance and overcoming limitations.These advancements pave the way for the wider adoption of Ga_(2)O_(3)-based devices in various power and RF applications.
基金China State Key Laboratory of Materials for Integrated Circuits(NKLJC-Z2023-A04)National Natural Science Foundation of China(62204250,61935003)National Key Research and Development Program of China(2021YFB2800303).
文摘This paper presents the design,fabrication,and characterization of a high-performance heterogeneous silicon on insulator(SOI)/thin film lithium niobate(TFLN)electro-optical modulator based on wafer-scale direct bonding followed by ion-cut technology.The SOI wafer has been processed by an 8 inch standard fabrication line and cut into 6 inch for direct bonding with TFLN.The hybrid SOI/LN electro-optical modulator operated at the wavelength of 1.55μmis composed of couplers on the Si layer and aMach-Zehnder interferometer(MZI)structure on theLNlayer.The fabricated device exhibits a stable value of the product of half-wave voltage and length(V_(π)L)of around 2.9 V·cm.It shows a good low-frequency electro-optic response flatness and supports 96 Gbit/s data transmission for the NRZ format and 192 Gbit/s data transmission for the PAM-4 format.
基金supported by the National Key Research and Development Program of China(Grant No.2019YFB1803902)the National Natural Science Foundation of China(Grant Nos.11905282,61874128,61851406,11705262,and 6187407)+4 种基金the Frontier Science Key Program of CAS(Grant Nos.QYZDY-SSWJSC032 and ZDBS-LY-JSC009)Chinese-Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)the Program of Shanghai Academic Research Leader(Grant No.19XD1404600)K.C.Wong Education Foundation(Grant No.GJTD-2019-11),Shanghai Sailing Program(Grant Nos.19YF1456200 and 19YF1456400)Shanghai Science and Technology Innovation Action Plan Program(Grant No.19XD1404600)。
文摘The monocrystalline LiNbO_(3)(LN)and LiTaO_(3)(LT)plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication.LN and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator(POI)substrate.The ion implantation is a key process and the implantation-induced strain is essential for the layer transfer.Here,we reported the strain profile of ion implanted rotated Y-cut LN and LT.The ion implantation generates the out-of-plane tensile strain of the sample surface and(006)plane,while both the tensile and compressive strain are observed on the(030)plane.The implanted ions redistributed due to the anisotropy of LN and LT,and induce the main tensile normal to the(006)plane.Meanwhile,the(030)planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.
基金support from the Ministry of Science and Technology of China (No. 2016YFA0202803 and 2018YFA0704503)the National Natural Science Foundation of China (21991152,21991150, 21802096, 21832004, 21902179 and 22072093)+2 种基金the Shanghai-XFEL Beamline Project (SBP) (no. 31011505505885920161A2101001)supported by ME2 project under contract No.11227902 from National Natural Science Foundation of Chinasupport of Shanghai Sailing Program (No. 19YF1455600)。
文摘Photoelectrochemical(PEC)water-splitting using solar energy holds great promise for the renewable energy future,and a key challenge in the development of industry viable PEC devices is the unavailability of high-efficient photoanodes.Herein,we designed a TiO_(2) model photocatalyst with nano-groove pattern and different surface orientation using low-energy Ar+irradiation and photoetching of TiO_(2),and significantly improved the intrinsic activity for PEC water oxidation.High-resolution transmission electron microscopy directly manifests that the grooves consist of highly stepped surface with<110>steps and well-crystallized.Transient absorption spectroscopy reveals the groove surface that allows for increased recovery lifetime,which ensures promoted electron-hole separation efficiency.Surface photovoltage directly shows the carrier separation and transportation behaviors,verified by selective photodeposition,demonstrating the groove surface on TiO_(2) contributes to electron-hole separation.This work proposes an efficient and scalable photoanode strategy,which potentially can open new opportunities for achieving efficient PEC water oxidation performance.
基金supported by the National Natural Science Foundation of China(62293521,62174167,12205119)Shanghai Rising-Star Program(22QA1410700)+2 种基金China Postdoctoral Science Foundation(2022M723282)Zhejiang Provincial Natural Science Foundation of China(LQ23F040002)Jiaxing Municipal Public Welfare Research Project(2022AY10027).
文摘A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics.Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot(QD)lasers,extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult.In this study,we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si(100)(InPOS)heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate.This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth,namely lattice and domain mismatches.Using this approach,we achieved state-of-the-art performance of the electrically-pumped,continuouswave(CW)1.55-μm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm^(-2),and output power exceeding 155mW per facet without facet coating in CW mode.CW lasing at 120℃ and pulsed lasing at over 130℃ were achieved.This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFE0131300)the National Natural Science Foundation of China(Grant Nos.U1732268,61874128,11622545,61851406,11705262,and 61804157)+5 种基金the Frontier Science Key Program of the Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC032)the Chinese-Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)the Science and Technology Innovation Action Plan Program of Shanghai,China(Grant No.17511106202)the Program of Shanghai Academic Research Leader,China(Grant No.19XD1404600)the Sailing Program of Shanghai,China(Grant Nos.19YF1456200 and 19YF1456400)the K C Wong Education Foundation(Grant No.GJTD-2019-11).
文摘Strain and stress were simulated using finite element method(FEM)for threeⅢ-V-on-Insulator(Ⅲ-VOI)structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for optoelectronic devices on Si.The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy.Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness.The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk.The simulated results reveal thermal stress on Al2O3 over 1 GPa,which is much higher than its critical stress for interfacial fracture.InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.
基金supported by the National Natural Science Foundation of China(Nos.32470586 and 31971332 to Y.F.,Nos.91942301 and 81430099 to A.X.)National Key Research and Development Program of China(No.2022YFA1103900 to Y.F.)Guangdong Science and Technology Department(No.2023B1212060028 to A.X.).
文摘Protein liquid-liquid phase separation(LLPS),a pivotal phenomenon intricately linked to cellular processes,is regulated by various other proteins.However,there is still a lack of high-throughput methods for screening protein regulators of LLPS in target proteins.Here,we developed a CRISPR/Cas9-based screening method to identify protein phase separation regulators by integrating bimolecular fluorescence complementation(BiFC)and fluorescence-activated cell sorting(FACS).Using this newly developed method,we screened the RNA-binding proteins that regulate PABPN1 phase separation and identified the tumor suppressor QKI as a promoter of PABPN1 phase separation.Furthermore,QKI exhibits decreased expression levels and diminished nuclear localization in colorectal cancer cells,resulting in reduced PABPN1 phase separation,which,in turn,promotes alternative polyadenylation(APA),cell proliferation,and migration in colorectal cancer.
基金National Key Research and Development Program of China(2022YFA1404601)National Natural Science Foundation of China(62293520,62293521,12074400,62205363,12104442,12404446,12293052)+4 种基金Shanghai Science and Technology Innovation Action Plan Program(20JC1416200,22JC1403300)CAS Project for Young Scientists in Basic Research(YSBR-69)Natural Science Foundation of Anhui Province(2408085QA010)China Postdoctoral Science Foundation(2024M753078)Postdoctoral Fellowship Program of CPSF(GZC20232560)。
文摘Chip-based soliton frequency microcombs combine compact size,broad bandwidth,and high coherence,presenting a promising solution for integrated optical telecommunications,precision sensing,and spectroscopy.Recent progress in ferroelectric thin films,particularly thin-film lithium niobate(LiNbO_(3))and thin-film lithium tantalate(LiTaO_(3)),has significantly advanced electro-optic(EO)modulation and soliton microcombs generation,leveraging their strong third-order nonlinearity and high Pockels coefficients.However,achieving soliton frequency combs in X-cut ferroelectric materials remains challenging due to the competing effects of thermo-optic and photorefractive phenomena.These issues hinder the simultaneous realization of soliton generation and high-speed EO modulation.Here,following the thermal-regulated carrier behavior and auxiliary-laser-assisted approach,we propose a convenient mechanism to suppress both photorefractive and thermal dragging effects at once,and implement a facile method for soliton formation and its longterm stabilization in integrated X-cut LiTaO_(3) microresonators for the first time,to the best of our knowledge.The resulting mode-locked states exhibit robust stability against perturbations,enabling new pathways for fully integrated photonic circuits that combine Kerr nonlinearity with high-speed EO functionality.
基金supported by the funding from National Natural Science Foundation of China(Grants No.61851406,61874128,and U1732268)Frontier Science Key Program of CAS(Grant No.QYZDY-SSWJSC032)+2 种基金Program of Shanghai Academic Research Leader(Grant No.19XD1404600)K.C.Wong Education Foundation(Grant No.GJTD-2019-11)Shenzhen Science and Technology Innovation Program(Grant No.JCYJ20190806142614541).
文摘The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.
基金supported by National Key R&D Program of China(No.2017YFE0131300)Science and Technology Commission of Shanghai Municipality(Nos.16ZR1442600,20JC1416200)+3 种基金Shanghai Rising-Star Program(No.19QA1410600)Program of Shanghai Academic/Technology Research Leader(No.19XD1404600)National Natural Science Foundation of China(Nos.12074400,U1732268,61874128,61851406,11705262,11774326)Frontier Science Key Program of Chinese Academy of Sciences(No.QYZDY-SSW-JSC032).
文摘Integrated photonic quantum circuits(IPQCs)have attracted increasing attention in recent years due to their widespread applications in quantum information science.While the most envisioned quantum technologies such as quantum communications,quantum computer and quantum simulations have placed a strict constraint on the scalability of chip-integrated quantum light sources.By introducing sizeconfined nanostructures or crystal imperfections,low-dimensional semiconductors have been broadly explored as chip-scale deterministic single-photon sources(SPSs).Thus far a variety of chip-integrated deterministic SPSs have been investigated across both monolithic and hybrid photonic platforms,including molecules,quantum dots,color centers and two-dimensional materials.With the rapid development of the chip-scale generation of single photons with deterministic quantum emitters,the field of IPQCs has raised new challenges and opportunities.In this paper,we highlight recent progress in the development of waveguide-coupled deterministic SPSs towards scalable IPQCs,and review the post-growth tuning techniques that are specifically developed to engineer the optical properties of these WG-coupled SPSs.Future prospects on stringent requirement for the quantum engineering toolbox in the burgeoning field of integrated photonics are also discussed.
基金supported by the National Key Research and Development Program of China(Grant No.2017YFE0131300)the National Natural Science Foundation of China(Grant Nos.U1732268,61874128,11622545,61851406,11705262,61875220,and 61804157)+7 种基金the Frontier Science Key Program of Chinese Academy of Sciences(Grant Nos.QYZDY-SSWJSC032,and ZDBS-LY-JSC009)the Chinese-Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)the Shanghai Science and Technology Innovation Action Plan Program(Grant No.17511106202)the Program of Shanghai Academic Research Leader(Grant No.19XD1404600)the Shanghai Youth Top Talent ProgramShanghai Sailing Program(Grant Nos.19YF1456200,and 19YF1456400)the K.C.Wong Education Foundation(Grant No.GJTD-2019-11)the NCBiR within the Polish-China(Grant No.WPC/130/NIR-Si/2018)。
文摘In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate.
基金National Key R&D Program of China(2017YFE0131300,2019YFA0705000)National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,11705262,11905282,12004116,12074400,and 11734009)+4 种基金Frontier Science Key Program of CAS(No.QYZDY-SSW-JSC032)Chinese-Austrian Cooperative R&D Project(No.GJHZ201950)Program of Shanghai Academic Research Leader(19XD1404600)Shanghai Sailing Program(No.19YF1456200,19YF1456400)K.C.Wong Education Foundation(GJTD-2019-11).
文摘The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies.Here,photonic microresonators with a mean Q factor of 6.75×10^(6)were demonstrated on a 4H-silicon-carbide-on-insulator(4H-SiCOI)platform,as determined by a statistical analysis of tens of resonances.Using these devices,broadband frequency conversions,including second-,third-,and fourth-harmonic generations have been observed.Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time,to the best of our knowledge.Meanwhile,by engineering the dispersion properties of the SiC microresonator,we have achieved broadband Kerr frequency combs covering from 1300 to 1700nm.Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.61234003,61434004,and 61504141)National Key Research and Development Program of ChinaCAS Interdisciplinary Project(Grant No.KJZD-EW-L11-04)。
文摘Many breakthroughs in technologies are closely associated with the deep understanding and development of new material platforms.As the main material used in microelectronics,Si also plays a leading role in the development of integrated photonics.The indirect bandgap,absence ofχ(2)nonlinearity and the parasitic nonlinear absorptions at the telecom band of Si imposed technological bottlenecks for further improving the performances and expanding the functionalities of Si microcavities in which the circulating light intensity is dramatically amplified.The past two decades have witnessed the burgeoning of the novel material platforms that are compatible with the complementary metal-oxide-semiconductor(COMS)process.In particular,the unprecedented optical properties of the emerging materials in the thin film form have resulted in revolutionary progress in microcavity photonics.In this review article,we summarize the recently developed material platforms for integrated photonics with the focus on chip-scale microcavity devices.The material characteristics,fabrication processes and device applications have been thoroughly discussed for the most widely used new material platforms.We also discuss open challenges and opportunities in microcavity photonics,such as heterogeneous integrated devices,and provide an outlook for the future development of integrated microcavities.
基金the National Key Research and Development Project(Grant No.2018YFB2200500)the National Natural Science Foundation of China(Grant Nos.61851406,61874128,11622545,61534004,61604112,and 61622405)+1 种基金the Frontier Science Key Program of Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC032)the Shanghai Municipal Science and Technology Commission(Grant No.18511110503)。
文摘β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting process.Enhancement(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thickness(Tch).E-mode GaOISi transistor with a Tchof 15 nm achieves a high threshold voltage VTHof^8 V.With the same T increase,GaOISi transistors demonstrate more stable ON-current IONand OFF-current IOFFperformance compared to the reported devices on bulk Ga2O3 wafer.Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C,respectively.
基金supported by National Key R&D Program of China(2022YFA1404600,2017YFE0131300,and 2019YFA0705000)National Natural Science Foundation of China(No.62293520,62293521,61874128,11705262,11905282,12004116,12074400,11934012,62205363,and 11734009)+7 种基金Frontier Science Key Program of CAS(No.QYZDY-SSW-JSC032)Chinese-Austrian Cooperative R&D Project(No.GJHZ 201950)Shanghai Sailing Program(No.19YF1456200,19YF1456400)K.C.Wong Education Foundation(GJTD-2019-11)the Key Research Project of Zhejiang Laboratory under Grant 2021MD0AC01Science and Technology Commission of Shanghai Municipality(NO.21DZ1101500)Strategic Priority Research Program of the CAS(XDC07030200)Shanghai Science and Technology Innovation Action Plan Program(22JC1403300).
文摘Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication,sensing,and metrology applications.The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible,such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume.Silicon nitride has become the leading CMOS platform for integrated soliton devices,however,it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation.Other materials have emerged such as AlN,LiNbO_(3),AlGaAs and GaP that exhibit simultaneous second-and third-order nonlinearities.Here,we show that silicon carbide(SiC)--already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics,MOSFET,and MEMS due to its wide bandgap properties,excellent mechanical properties,piezoelectricity and chemical inertia--is a new competitive CMOS-compatible platform for nonlinear photonics.High-quality-factor microresonators(Q=4×10^(6))are fabricated on 4H-SiC-on-insulator thin films,where a single soliton microcomb is generated.In addition,we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC.Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.
基金National Natural Science Foundation of China(61971409)Youth Innovation Promotion Association of the Chinese Academy of Sciences(2019238)+1 种基金National Key Research and Development Program of China(2017YFA0304000)Science and Technology Commission of Shanghai Municipality(18511110202,2019SHZDZX01).
文摘Generally,a superconducting nanowire single-photon detector(SNSPD)is composed of wires with a typical width of∼100 nm.Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons.Compared with the SNSPD covering the same area,the superconducting microstrip single-photon detector(SMSPD)has smaller kinetic inductance,higher working current,and lower requirements in fabrication accuracy,providing potential applications in the development of ultralarge active area detectors.However,the study of SMSPD is still in its infancy,and the realization of its high-performance and practical use remains an open question.This study demonstrates a NbN SMSPD with a nearly saturated system detection efficiency(SDE)of∼92.2%at a dark count rate of∼200 cps,a polarization sensitivity of∼1.03,and a minimum timing jitter of∼48 ps at the telecom wavelength of 1550 nm when coupled with a single-mode fiber and operated at 0.84 K.Furthermore,the detector’s SDE is over 70%when operated at a 2.1 K closed-cycle cryocooler.
基金This work was supported by the National Key Research and Development Program of China(Nos.2017YFE0131300 and 2019YFB1803901)National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,12074400,11705262,and 11905282)+7 种基金Frontier Science Key Program of Chinese Academy of Sciences(No.QYZDY-SSW-JSC032)Shanghai Key Basic Research Program(No.20JC1416200)Program of Shanghai Academic Research Leader(Nos.9XD1404600 and 19XD1404600)Shanghai Rising-Star Program(No.19QA1410600)Shanghai Sailing Program(No.18YF1428100)Shanghai Municipal Science and Technology Major Project(No.2017SHZDZX03)Strategic Priority Research Program of Chinese Academy of Sci-ences(Nos.XDB24020400 and XDB0000000)Science and Technology Comission of Shanghai Municipality(No.16ZR1442600).
文摘The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l platform.The cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength range.Moreover,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.
