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Microstructure, Photoluminescent Properties and Application of ZnO Films Grown on Al Foils
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作者 吴红艳 ZHAO Jiayu +3 位作者 xie aigen XU Linhua ZHONG Kun SHEN Tongtong 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2015年第2期408-411,共4页
To obtain safety working before long-term early warning, we proposed a process for the preparation of luminescent films on metal substrate to detect the wear life. ZnO films were prepared on aluminum(Al) foils by th... To obtain safety working before long-term early warning, we proposed a process for the preparation of luminescent films on metal substrate to detect the wear life. ZnO films were prepared on aluminum(Al) foils by the magnetron sputtering technique. The microstructure, tribological properties and photoluminescence(PL) spectra of ZnO films before and after the friction test were investigated. The microstructure of ZnO films grown on Al foils exhibited a closely packed hexagonal cone shape. ZnO films were grown along the orientation perpendicular to the substrate. The tribometric tests revealed that the average friction coefficient of ZnO films was lower and more stable than that of the substrate. The results of PL spectra indicated that the effect of Al element on ZnO films led to shifts of the defect related visible band. The luminescent center of ZnO films shifted from the emission peak at 510 nm before the friction to 647 nm after the friction, indicating that the green light shifted into the red light as the friction occurred. The visible light was helpful to understanding the failure characteristics during the friction and wear, and provide an early indicator of the impending failure. 展开更多
关键词 ZnO films photoluminescence friction and wear the failure
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负电子亲和半导体的二次电子发射
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作者 刘亦凡 谢爱根 董洪杰 《空间电子技术》 2022年第4期30-49,共20页
根据0.8 keV≤E_(pomax)≤5 keV的负电子亲和(negative electron affinity,NEA)半导体二次电子发射(secondary electron emission,SEE)的特性,初级电子产额R,现有的次级电子产额δ的通用公式和实验数据,分别推导并实验证明了NEA金刚石... 根据0.8 keV≤E_(pomax)≤5 keV的负电子亲和(negative electron affinity,NEA)半导体二次电子发射(secondary electron emission,SEE)的特性,初级电子产额R,现有的次级电子产额δ的通用公式和实验数据,分别推导并实验证明了NEA金刚石的δ在0.5 E_(pomax)≤E_(po)≤10 E_(pomax),GaN在2 keV≤E_(pomax)≤5 keV,NEA金刚石的δ在0.8 keV≤E_(po)≤3 keV,GaN在0.8 keV≤E_(pomax)≤2 keV的特殊公式;其中E_(pomax)为δ达到最大值时的E_(po),E_(po)为初级电子入射能。推导出了0.8 keV≤E_(pomax)≤5 keV时NEA半导体的内部二次电子到达发射极表面后逃逸到真空中的概率B。还提出了计算0.8 keV≤E_(pomax)≤5 keV NEA半导体1/α的方法;其中1/α为二次电子的平均逃逸深度。分析结果表明,B和1/α的理论研究有助于研究不同样品制备方法对NEA半导体中SEE的定量影响,从而生产出理想的NEA发射体,如NEA金刚石。 展开更多
关键词 负电子亲和力 二次电子产额 概率 二次电子的平均逃逸深度 半导体
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