By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for fre...By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for free layer,the magnetic properties of the stacks have been investigated by changing the thickness of Co,Ru and Pt layers using an orthogonal wedges technique.It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness.Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop.The switching magnetization of synthetic antiferromagnetic（SAF） structure is achieved by DC current under an in-plane static magnetic field of ± 500 Oe.This structure is very promising for free layer in spintronic application.展开更多
基金supported by the National Natural Science Foundation of China under grants Nos.51590883,51331006 and51471167a project of the Chinese Academy of Sciences with grant No.KJZD-EW-M05-3
文摘By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for free layer,the magnetic properties of the stacks have been investigated by changing the thickness of Co,Ru and Pt layers using an orthogonal wedges technique.It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness.Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop.The switching magnetization of synthetic antiferromagnetic（SAF） structure is achieved by DC current under an in-plane static magnetic field of ± 500 Oe.This structure is very promising for free layer in spintronic application.
