Due to its far-reaching scientific impact and broad applications, coherent resonant tunneling effect in magnetic tunnel junctions has aroused intensive interest from spintronic and semiconductor communities. Actually,...Due to its far-reaching scientific impact and broad applications, coherent resonant tunneling effect in magnetic tunnel junctions has aroused intensive interest from spintronic and semiconductor communities. Actually, resonant tunneling effect has been verified and utilized in semiconductor-based multiquantum wells, such as resonant tunneling diode and light-emitting diodes with multiple quantum wells and etc.展开更多
It has long been a challenging goal to realize magnetization switching of magnetic films in zero field condition. Benefiting from the development of all-electrical magnetization switching methods over the past decades...It has long been a challenging goal to realize magnetization switching of magnetic films in zero field condition. Benefiting from the development of all-electrical magnetization switching methods over the past decades, magnetic random access memory(MRAM)has also been evolving generation bx generation.展开更多
基金financially supported by the National natural Science Foundation of China(NSFC)the State Key R&D Projects sponsored by the Ministry of Science and Technology(MOST)of Chinathe China France bilateral Cooperation and Exchange Projects,and the CAS
文摘Due to its far-reaching scientific impact and broad applications, coherent resonant tunneling effect in magnetic tunnel junctions has aroused intensive interest from spintronic and semiconductor communities. Actually, resonant tunneling effect has been verified and utilized in semiconductor-based multiquantum wells, such as resonant tunneling diode and light-emitting diodes with multiple quantum wells and etc.
基金supported by the National Key Research and Development Program of China(MOST)the National Natural Science Foundation of China(NSFC)
文摘It has long been a challenging goal to realize magnetization switching of magnetic films in zero field condition. Benefiting from the development of all-electrical magnetization switching methods over the past decades, magnetic random access memory(MRAM)has also been evolving generation bx generation.
