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Hybrid functional IrO_2-TiO_2 thin film resistor prepared by atomic layer deposition for thermal inkjet printheads 被引量:3
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作者 won-sub kwack Hyoung-Seok MOON +2 位作者 Seong-Jun JEONG Qi-min WANG Se-Hun KWON 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第A01期88-91,共4页
IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir(EtCp)(COD) and titanium isopropoxide (TTIP). The resistivity of IrO2-TiO2 thin films can be easily controlled from 1 500 to 356.7 μΩ·... IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir(EtCp)(COD) and titanium isopropoxide (TTIP). The resistivity of IrO2-TiO2 thin films can be easily controlled from 1 500 to 356.7 μΩ·cm by the IrO2 intermixing ratio from 0.55 to 0.78 in the IrO2-TiO2 thin films. The low temperature coefficient of resistance(TCR) values can be obtained by adopting IrO2-TiO2 composite thin films. Moreover, the change in the resistivity of IrO2-TiO2 thin films was below 10% even after O2 annealing process at 600 ℃. The step stress test results show that IrO2-TiO2 films have better characteristics than conventional TaN08 heater resistor. Therefore, IrO2-TiO2 composite thin films can be used as a heater resistor material in thermal inkjet printhead. 展开更多
关键词 IrO2-TiO2 film heating resistor INKJET
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