Using spatially averaged global model,we succeed in obtaining some plasma parameters for a low pressure inductively coupled plasma source of our laboratory.As far as the global balance is concerned,the models can give...Using spatially averaged global model,we succeed in obtaining some plasma parameters for a low pressure inductively coupled plasma source of our laboratory.As far as the global balance is concerned,the models can give reasonable results of the parameters,such as the global electron temperature and the ion impacting energy,etc.It is found that the ion flow is hardly affected by the neutral gas pressure.Finally,the magnetic effects are calculated by means of the method.The magnetic field can play an important role to increase plasma density and ion current.展开更多
Using a 2-D hybrid model,the authors have found that external currents play an important role in the plasma parameters in the reactor.The plasma density,temperature and electrostatic potential would be significantly i...Using a 2-D hybrid model,the authors have found that external currents play an important role in the plasma parameters in the reactor.The plasma density,temperature and electrostatic potential would be significantly influenced by the applied external currents.展开更多
It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technol...It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate （HK/MG） stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.展开更多
基金Supported in part by the Presidential Foundation of Chinese Academy of Sciencesthe National Education Foundation of Chinathe National Natural Science Foundation of China.
文摘Using spatially averaged global model,we succeed in obtaining some plasma parameters for a low pressure inductively coupled plasma source of our laboratory.As far as the global balance is concerned,the models can give reasonable results of the parameters,such as the global electron temperature and the ion impacting energy,etc.It is found that the ion flow is hardly affected by the neutral gas pressure.Finally,the magnetic effects are calculated by means of the method.The magnetic field can play an important role to increase plasma density and ion current.
文摘Using a 2-D hybrid model,the authors have found that external currents play an important role in the plasma parameters in the reactor.The plasma density,temperature and electrostatic potential would be significantly influenced by the applied external currents.
基金the National Natural Science Foundation of China (Grant Nos. 60625403, 90207004)the National Basic Research Program of China (Grant No. 2006CB302701)
文摘It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate （HK/MG） stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.
