Electroplated Cu,which can be compatible with integrated circuit technology and large-scale silicon wafers,is explored as a substrate to synthesize graphene domains by ambient-pressure chemical vapor deposition.Hexago...Electroplated Cu,which can be compatible with integrated circuit technology and large-scale silicon wafers,is explored as a substrate to synthesize graphene domains by ambient-pressure chemical vapor deposition.Hexagonal single crystal domains of graphene are synthesized on electroplated Cu under dilute methane gas flow.Scanning electron microscopy images of graphene domains grown on electroplated Cu indicate that the domain size is time-dependent,and the domains can cross Cu grain boundaries and are distributed more uniformly on electroplated Cu surface than those grown on Cu foil.展开更多
基金Supported by the National Science and Technology Specific Projects(No 2011ZX02707)the National Basic Research Program of China(No 2011CB309501)+1 种基金the Foundation for Innovative Research Groups of the National Natural Science Foundation of China under Grant(No 61021064)the National Natural Science Foundation of China(Nos 60936001,81201358 and 91123037).
文摘Electroplated Cu,which can be compatible with integrated circuit technology and large-scale silicon wafers,is explored as a substrate to synthesize graphene domains by ambient-pressure chemical vapor deposition.Hexagonal single crystal domains of graphene are synthesized on electroplated Cu under dilute methane gas flow.Scanning electron microscopy images of graphene domains grown on electroplated Cu indicate that the domain size is time-dependent,and the domains can cross Cu grain boundaries and are distributed more uniformly on electroplated Cu surface than those grown on Cu foil.
