InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation.The catalytic growth of nonepitaxial ...InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation.The catalytic growth of nonepitaxial InAs nanowires,however,has often relied on the use of Au colloids which is non-CMOS compatible.Here,we demonstrate the successful synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on amorphous SiO_(2) substrates.The nanowires show superb electrical properties with field-effect electron mobility~2700 cm^(2)/Vs and ION/IOFF>10^(3).The uniformity and purity of the grown InAs nanowires are further demonstrated by large-scale assembly of parallel arrays of nanowires on substrates via the contact printing process that enables high performance,“printable”transistors,capable of delivering 510 mA ON currents(~400 nanowires).展开更多
基金supported by MARCO/MSD Focus Center Research Program,Intel Corporation,Lawrence Berkeley National Laboratory,and an Intel Graduate Fellowship(J.C.H.).All fabrication was performed in the UC Berkeley Microlab facility.TEM imaging was performed at the Molecular Foundry,Lawrence Berkeley National Laboratory,which is supported by the Office of Science,Office of Basic Energy Sciences,U.S.Department of Energy,under Contract No.DE-AC02-05CH11231.
文摘InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation.The catalytic growth of nonepitaxial InAs nanowires,however,has often relied on the use of Au colloids which is non-CMOS compatible.Here,we demonstrate the successful synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on amorphous SiO_(2) substrates.The nanowires show superb electrical properties with field-effect electron mobility~2700 cm^(2)/Vs and ION/IOFF>10^(3).The uniformity and purity of the grown InAs nanowires are further demonstrated by large-scale assembly of parallel arrays of nanowires on substrates via the contact printing process that enables high performance,“printable”transistors,capable of delivering 510 mA ON currents(~400 nanowires).
