Due to its superior mechanical and electrical properries,silicon carbide(SiC)is a technologically important material in the development of high-temperature,high-power,high-frequency electronic devices and in nuclear e...Due to its superior mechanical and electrical properries,silicon carbide(SiC)is a technologically important material in the development of high-temperature,high-power,high-frequency electronic devices and in nuclear energy and waste technologies.In the former cases,helium implantation can be used to introduce展开更多
The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specim...The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2.展开更多
文摘Due to its superior mechanical and electrical properries,silicon carbide(SiC)is a technologically important material in the development of high-temperature,high-power,high-frequency electronic devices and in nuclear energy and waste technologies.In the former cases,helium implantation can be used to introduce
文摘The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2.
