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Effect of Secondary Processing and Nanoscale Reinforcement on the Mechanical Properties of Al-TiC Composites 被引量:1
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作者 v. senthilkumar A. Balaji Hafeez Ahamed 《Journal of Minerals and Materials Characterization and Engineering》 2011年第14期1293-1306,共14页
Aluminium based composites containing 1, 1.5 and 2wt. % of nano-sized Titanium Carbide particulates (TiC), with an average of 45nm, reinforcement were synthesized using low energy planetary ball mill followed by hot e... Aluminium based composites containing 1, 1.5 and 2wt. % of nano-sized Titanium Carbide particulates (TiC), with an average of 45nm, reinforcement were synthesized using low energy planetary ball mill followed by hot extrusion. Microstructural characterization of the materials revealed uniform distribution of reinforcement, grain refinement and the presence of minimal porosity. Properties characterization revealed that the presence of nano-TiC particulates led to an increase in hardness, elastic modulus, 0.2% yield strength (0.2% offset on a stress-strain curve), and the stress at which a material exhibits a specified permanent deformation, Ultimate Tensile Strength (UTS) and ductility of pure aluminum. Fractography studies revealed that the fracture of pure aluminum occurred in ductile mode due to the incorporation and uniform distribution of nano-TiC particulates. An attempt is made in the present study to correlate the effect of nano-sized TiC particulates as reinforcement and processing type with the micro structural and tensile properties of aluminum composites. The mechanical properties, namely, the UTS, hardness, grain size and distribution of the reinforcement in the base metal were studied in as sintered and extruded conditions. Orowan strengthening criteria was used to predict the yield strength of Al-TiC composites in the present work and experimental results were compared with the theoretical results. 展开更多
关键词 Nano-particulates Aluminum TENSILE properties Microstructure DUCTILITY Orowanstrengthening
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Synthesis and Characterization of Ultrafine Grained 304 Stainless Steel through Machining
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作者 v. senthilkumar K. Lenin 《Journal of Minerals and Materials Characterization and Engineering》 2011年第5期455-461,共7页
The microstructures of 304 stainless steel chips created by plane strain machining at ambient temperature have been analyzed using scanning electron microscopy (SEM) and the crystallite size of the ultrafine chips wer... The microstructures of 304 stainless steel chips created by plane strain machining at ambient temperature have been analyzed using scanning electron microscopy (SEM) and the crystallite size of the ultrafine chips were analyzed using X-Ray Diffraction Analysis. The strain imposed in the chips was varied by changing the tool rake angle. An attempt is made in the present investigation to correlate the plastic strain, strain rate with the grain size of the stainless steel. 展开更多
关键词 PLANE STRAIN MACHINING NANOCRYSTALLINE STRAIN rate.
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Direct vapor phase growth process and robust photoluminescence properties of large area MoS2 layers 被引量:7
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作者 v. senthilkumar Le C. Tam +3 位作者 Yong Soo Kim Yumin Sim Maeng-Je Seong Joon. I. Jang 《Nano Research》 SCIE EI CAS CSCD 2014年第12期1759-1768,共10页
There has been growing research interest in the use of molybdenum disulfide in the fields of optoelectronics and energy harvesting devices, by virtue of its indirect-to-direct band gap tunability. However, obtaining l... There has been growing research interest in the use of molybdenum disulfide in the fields of optoelectronics and energy harvesting devices, by virtue of its indirect-to-direct band gap tunability. However, obtaining large area thin films of MoS2 for future device applications still remains a challenge. In the present study, the amounts of the precursors (S and MOO3) were varied systematically in order to optimize the growth of highly crystalline and large area MoS2 layers by the chemical vapor deposition method. Careful control of the amounts of precursors was found to the key factor in the synthesis of large area highly crystalline flakes. The thickness of the layers was confirmed by Raman spectroscopy and atomic force microscopy. The optical properties and chemical composition were studied by photoluminescence (PL) and X-ray photoelectron spectroscopy. The emergence of strong direct excitonic emissions at 1.82 eV (A-exciton, with a normalized PL intensity of -55 × 10^3) and 1.98 eV (B-exciton, with a normalized PL intensity of -5 × 10^3) of the sample at room temperature clearly indicates the high luminescence quantum efficiency. The mobility of the films was found to be 0.09 cm^2/(V.s) at room temperature. This study provides a method for the controlled synthesis of high-quality two-dimensional (2D) transition metal dichalcogenide materials, useful for applications in nanodevices, optoelectronics and solar energv conversion. 展开更多
关键词 molybdenum disulfide CVD growth large area RAMAN PHOTO-LUMINESCENCE field-effect ransistor (FET)
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