In recent years,graphene field-effect-transistors(GFETs)have demonstrated an outstanding potential for terahertz(THz)photodetection due to their fast response and high-sensitivity.Such features are essential to enable...In recent years,graphene field-effect-transistors(GFETs)have demonstrated an outstanding potential for terahertz(THz)photodetection due to their fast response and high-sensitivity.Such features are essential to enable emerging THz applications,including 6G wireless communications,quantum information,bioimaging and security.However,the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device,so-called access or parasitic resistances.In this work,we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors.Such dual-gate architectures allow us to fine tune(decrease)the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector,respectively.Our results can be well understood by a series resistance model,as shown by the excellent agreement found between the experimental data and theoretical calculations.These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.展开更多
基金support from the Ministry of Science and Innovation(MCIN)and the Spanish State Research Agency(AEI)under grants(PID2021-126483OB-I00,PID2021-128154NA-I00 and PID2022-136285NB-C32)funded by MICIU/AEI/https://doi.org/10.13039/501100011033 and by“ERDF A way of making Europe.”This work has been also supported by Junta de Castilla y Leon co-funded by FEDER under the Research Grant numbers SA103P23 and SA106P23+3 种基金KW and TT acknowledge support from the JSPS KAKENHI(Grant Numbers 21H05233 and 23H02052)and World Premier International Research Center Initiative(WPI),MEXT,JapanJMC acknowledges financial support by the MCIN and AEI“Ramon y Cajal”program(RYC2019-028443-I)funded by MICIU/AEI/https://doi.org/10.13039/501100011033 and by“ESF Investing in Your Future.”JMC also acknowledges financial of the European Research Council(ERC)under Starting grant ID 101039754,CHIROTRONICS,funded by the European UnionJAD-N thanks the support from the Universidad de Salamanca for the Maria Zambrano postdoctoral grant funded by the Next Generation EU Funding for the Requalification of the Spanish University System 2021-23,Spanish Ministry of Universities.ies.
文摘In recent years,graphene field-effect-transistors(GFETs)have demonstrated an outstanding potential for terahertz(THz)photodetection due to their fast response and high-sensitivity.Such features are essential to enable emerging THz applications,including 6G wireless communications,quantum information,bioimaging and security.However,the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device,so-called access or parasitic resistances.In this work,we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors.Such dual-gate architectures allow us to fine tune(decrease)the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector,respectively.Our results can be well understood by a series resistance model,as shown by the excellent agreement found between the experimental data and theoretical calculations.These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.
