Single-crystal samples of type-VIII BasGa16-xCuxSn30 （x = 0, 0.03, 0.06, 0.15） clathrates were prepared using the Sn-flux method. At room temperature the carrier density, n, is 3.5-5 × 10^19 cm^-3 for all the s...Single-crystal samples of type-VIII BasGa16-xCuxSn30 （x = 0, 0.03, 0.06, 0.15） clathrates were prepared using the Sn-flux method. At room temperature the carrier density, n, is 3.5-5 × 10^19 cm^-3 for all the samples, the carrier mobility, μH, increases to more than twice that of BasGa16Sn30 for all the Cu doping samples, and consequently the electrical conductivity is enhanced distinctly from 1.90×10^4 S/m to 4.40 ×10^4 S/m, with the Cu composition increasing from x = 0 to x = 0.15. The Seebeck coefficient,α, decreases slightly with the increases in Cu composition. The values are about 0.72 W/mK at 300 K and are almost invariant with temperature up to 500 K for the samples with x = 0 and x = 0.03. The lattice thermal conductivity, μL, decreases from 0.59 W/InK for x = 0 to 0.50 W/mK for x = 0.03 at 300 K. The figure of merit for x = 0.03 reaches 1.35 at 540 K.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.50902119)
文摘Single-crystal samples of type-VIII BasGa16-xCuxSn30 （x = 0, 0.03, 0.06, 0.15） clathrates were prepared using the Sn-flux method. At room temperature the carrier density, n, is 3.5-5 × 10^19 cm^-3 for all the samples, the carrier mobility, μH, increases to more than twice that of BasGa16Sn30 for all the Cu doping samples, and consequently the electrical conductivity is enhanced distinctly from 1.90×10^4 S/m to 4.40 ×10^4 S/m, with the Cu composition increasing from x = 0 to x = 0.15. The Seebeck coefficient,α, decreases slightly with the increases in Cu composition. The values are about 0.72 W/mK at 300 K and are almost invariant with temperature up to 500 K for the samples with x = 0 and x = 0.03. The lattice thermal conductivity, μL, decreases from 0.59 W/InK for x = 0 to 0.50 W/mK for x = 0.03 at 300 K. The figure of merit for x = 0.03 reaches 1.35 at 540 K.
