The modulation-doped Al_(0.22)Ga_(0.78)N/GaN heterostructures with different Al_(0.22)Ga_(0.78)N barrier thicknesses were grown by means of metal--organic chemical vapour deposition.The Al_(0.22)Ga_(0.78)N layer still...The modulation-doped Al_(0.22)Ga_(0.78)N/GaN heterostructures with different Al_(0.22)Ga_(0.78)N barrier thicknesses were grown by means of metal--organic chemical vapour deposition.The Al_(0.22)Ga_(0.78)N layer still has pseudomorphic growth when its thickness is 53nm.The mobility of the two-dimensional electron gas(2DEG)at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 and 77K.The dramatic decrease of the 2DEG mobility in an Al_(0.22)Ga_(0.78)N/GaN heterostructure corresponds to the partial relaxation of the Al_(0.22)Ga_(0.78)N barrier.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos.69806006,69636010,69976017 and 69987001the National High Technology Research&Development Project of China(No.863-715-011-0030)+1 种基金the Research for the Future Program of the Japan Society for the Promotion of Science(Project No.JSPS-RFTF96P00201)the Foundation for the Promotion of Industrial Science in Japan.
文摘The modulation-doped Al_(0.22)Ga_(0.78)N/GaN heterostructures with different Al_(0.22)Ga_(0.78)N barrier thicknesses were grown by means of metal--organic chemical vapour deposition.The Al_(0.22)Ga_(0.78)N layer still has pseudomorphic growth when its thickness is 53nm.The mobility of the two-dimensional electron gas(2DEG)at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 and 77K.The dramatic decrease of the 2DEG mobility in an Al_(0.22)Ga_(0.78)N/GaN heterostructure corresponds to the partial relaxation of the Al_(0.22)Ga_(0.78)N barrier.
