We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improv...We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system.展开更多
The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad simulation.As the heterojunctions are having more advantageous properties that is a real support for so many application ...The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad simulation.As the heterojunctions are having more advantageous properties that is a real support for so many application such as solar cells,semiconductor cells and transistors.Special properties of semiconductors are discussed here with various parameters that are depending up on the performance of accurate device[Pardeshi H.,Pati S.K.,Raj G.,Mohankumar N.,Sarkar C.K.,J.Semicond.33(12):124001-1–124001-7,2012].The maximum drain current density is achieved with improving the density of two-dimensional electron gas(2DEG)and with high velocity.High electron mobility transistor(HEMT)structure is used with the different combinations of layers which have different bandgaps.Parameters such as electron mobility,bandgap,dielectric constant,etc.,are considered differently for each layer[Zhang A.,Zhang L.,Tang Z.,IEEE Trans.Electron Devices 61(3):755–761,2014].The high electron mobility electrons are now widely used in so many applications.The proposed work of AlInSb/InSb heterostructure implements the same process which will be a promise for future research works.展开更多
An indium antimonide based QWFET（quantum well field effect transistor） with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are de...An indium antimonide based QWFET（quantum well field effect transistor） with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors（ITRS）requirements of drive current（Semiconductor Industry Association 2010）. The performance of the device is investigated using the SYNOPSYS CAD（TCAD） software. In Sb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation.展开更多
文摘We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system.
文摘The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad simulation.As the heterojunctions are having more advantageous properties that is a real support for so many application such as solar cells,semiconductor cells and transistors.Special properties of semiconductors are discussed here with various parameters that are depending up on the performance of accurate device[Pardeshi H.,Pati S.K.,Raj G.,Mohankumar N.,Sarkar C.K.,J.Semicond.33(12):124001-1–124001-7,2012].The maximum drain current density is achieved with improving the density of two-dimensional electron gas(2DEG)and with high velocity.High electron mobility transistor(HEMT)structure is used with the different combinations of layers which have different bandgaps.Parameters such as electron mobility,bandgap,dielectric constant,etc.,are considered differently for each layer[Zhang A.,Zhang L.,Tang Z.,IEEE Trans.Electron Devices 61(3):755–761,2014].The high electron mobility electrons are now widely used in so many applications.The proposed work of AlInSb/InSb heterostructure implements the same process which will be a promise for future research works.
文摘An indium antimonide based QWFET（quantum well field effect transistor） with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors（ITRS）requirements of drive current（Semiconductor Industry Association 2010）. The performance of the device is investigated using the SYNOPSYS CAD（TCAD） software. In Sb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation.
