The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technolo...The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technologies based on amorphous Si,poly Si,and IGZO,face challenges in meeting the requirements of next-generation displays,including larger dimensions,higher refresh rates,increased pixel density,greater brightness,and reduced power consumption.In this context,2D chalcogenides have emerged as promising candidates for thin-film transistors(TFTs)in display backplanes,offering advantages such as high mobility,low leakage current,mechanical robustness,and transparency.This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes.We delve into the structural characteristics,electronic properties,and synthesis methods of 2D chalcogenides,emphasizing scalable growth strategies that are relevant to large-area display backplanes.Additionally,we discuss mechanical flexibility and strain engineering,crucial for the development of flexible displays.Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization,while considering scaling over a large area.Active-matrix implementation of 2D TFTs in various applications is also explored,benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes.Furthermore,the latest development on the integration of 2D chalcogenide TFTs with different display technologies,such as OLED,quantum dot,and MicroLED displays has been reviewed in detail.Finally,challenges and opportunities in the field are discussed with a brief insight into emerging trends and research directions.展开更多
We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors （FETs） on flexible plastic substrates without thermal damage. An analysis...We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors （FETs） on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly（ethylene naphthalate） （PEN） substrates with low thermal budget （〈 200 ℃）. The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility （from 24.84 to 44.84 cm2-V-l.s-1）, increased output resistance （0.42 MΩ at Vgs- Vth = 20 V, a three-fold increase）, a six-fold increase in the self-gain, and decreased sub- threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semicon- ductor FETs in flexible electronics.展开更多
Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities, large surface-to-volume ratios, and ...Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities, large surface-to-volume ratios, and rapid electrical responses to their surrounding environments. Here, we report the first implementation of a highly sensitive chemical-vapor-deposition-grown multilayer MoSe2 field-effect transistor （FET） in a NO2 gas sensor. This sensor exhibited ultra-high sensitivity （S = ca. 1,907 for NO2 at 300 ppm）, real-time response, and rapid on-off switching. The high sensitivity of our MoSe2 gas sensor is attributed to changes in the gap states near the valence band induced by the NO2 gas absorbed in the MoSe2, which leads to a significant increase in hole current in the off-state regime. Device modeling and quantum transport simulations revealed that the variation of gap states with NO2 concentration is the key mechanism in a MoSe2 FET-based NO2 gas sensor. This comprehensive study, which addresses material growth, device fabrication, characterization, and device simulations, not only indicates the utility of MoSe2 FETs for high-performance chemical sensors, but also establishes a fundamental understanding of how surface chemistry influences carrier transport in layered semiconductor devices.展开更多
Various approaches have been proposed for point-of-care diagnostics, and in particular, optical detection is preferred because it is relatively simple and fast. At the same time, field-effect transistor （FET）-based ...Various approaches have been proposed for point-of-care diagnostics, and in particular, optical detection is preferred because it is relatively simple and fast. At the same time, field-effect transistor （FET）-based biosensors have attracted great attention because they can provide highly sensitive and label-free detection. In this work we present highly sensitive, epidermal skin-type point-of-care devices with system-level integration of flexible MOS2 FET biosensors, read-out circuits, and light-emitting diode （LEDs） that enable real-time detection of prostate cancer antigens （PSA）. Regardless of the physical forms or mechanical stress conditions, our proposed high-performance MoS2 biosensors can detect a PSA concentration of 1 pg.mL-1 without specific surface treatment for anti-PSA immobilization on the MoS2 surface on which we characterize and confirm physisorption of anti-PSA using Kelvin probe force microscopy （KPFM） and tapping-mode atomic force microscopy （tm-AFM）. Furthermore, current modulation induced by the binding process was stably maintained for longer than 2-3 min. The results indicate that flexible MoS2-based FET biosensors have great potential for point-of-care diagnostics for prostate cancer as well as other biomarkers.展开更多
With advances in artificial intelligence(AI)-based algorithms,gesture recognition accuracy from sEMG signals has continued to increase.Spatiotemporal multichannel-sEMG signals substantially increase the quantity and r...With advances in artificial intelligence(AI)-based algorithms,gesture recognition accuracy from sEMG signals has continued to increase.Spatiotemporal multichannel-sEMG signals substantially increase the quantity and reliability of the data for any type of study.Here,we report an array of bipolar stretchable sEMG electrodes with a self-attention-based graph neural network to recognize gestures with high accuracy.The array is designed to spatially cover the skeletal muscles to acquire the regional sampling data of EMG activity from 18 different gestures.The system can differentiate individual static and dynamic gestures with~97%accuracy when training a single trial per gesture.Moreover,a sticky patchwork of holes adhered to an array sensor enables skin-like attributes such as stretchability and water vapor permeability and aids in delivering stable EMG signals.In addition,the recognition accuracy(~95%)remained unchanged even after long-term testing for over 72 h and being reused more than 10 times.展开更多
Multilayer MoS2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been l...Multilayer MoS2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS2 crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge results of the nanoscale laser confocal time-resolved PL measurements. transfer doping effect, validated by the microscope photoluminescence （PL） and展开更多
Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security surveillance.While traditional systems rely...Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security surveillance.While traditional systems rely on separate sensors for different lighting conditions,TMDs can absorb light across a broad-spectrum range.In this study,a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was implemented.The bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition.The WS2-based thin-film transistors(TFTs)exhibit high average mobility,excellent Ion/Ioff,and uniform electrical properties.The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W1(at a wavelength of 405 nm)owing to the photogating effect.Finally,red,green,blue,and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated.The proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing,which could lead to a range of new opportunities in various applications,including night vision,pedestrian detection,various surveillance,and security systems.展开更多
AIMS ＆ SCOPENano Research is a peer-reviewed, international and interdisciplinary journal that focuses on all aspects of nanoscience and nanotechnology. Submissions are solicited in all topical areas, ranging from ba...AIMS ＆ SCOPENano Research is a peer-reviewed, international and interdisciplinary journal that focuses on all aspects of nanoscience and nanotechnology. Submissions are solicited in all topical areas, ranging from basic aspects of the science of nanoscale materials to practical applications of such materials.展开更多
The second affiliation of the authors in the original version of this article was unfortunately wrongly written on the first page, instead of Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi ...The second affiliation of the authors in the original version of this article was unfortunately wrongly written on the first page, instead of Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 17104, Republic of Korea.展开更多
基金supported in part by the National Research Foundation of Korea Grant Number:RS-2024-00448809National Research Foundation of Korea Grant Number:RS-2025-00517255+1 种基金National Research Foundation of Korea Grant Number:No.2021M3H4A1A02056037supported by Basic Science Research Program through the National Research Foundation of Korean(NRF)funded by the Ministry of Education(2020R1A6A1A03040516).
文摘The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technologies based on amorphous Si,poly Si,and IGZO,face challenges in meeting the requirements of next-generation displays,including larger dimensions,higher refresh rates,increased pixel density,greater brightness,and reduced power consumption.In this context,2D chalcogenides have emerged as promising candidates for thin-film transistors(TFTs)in display backplanes,offering advantages such as high mobility,low leakage current,mechanical robustness,and transparency.This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes.We delve into the structural characteristics,electronic properties,and synthesis methods of 2D chalcogenides,emphasizing scalable growth strategies that are relevant to large-area display backplanes.Additionally,we discuss mechanical flexibility and strain engineering,crucial for the development of flexible displays.Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization,while considering scaling over a large area.Active-matrix implementation of 2D TFTs in various applications is also explored,benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes.Furthermore,the latest development on the integration of 2D chalcogenide TFTs with different display technologies,such as OLED,quantum dot,and MicroLED displays has been reviewed in detail.Finally,challenges and opportunities in the field are discussed with a brief insight into emerging trends and research directions.
文摘We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors （FETs） on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly（ethylene naphthalate） （PEN） substrates with low thermal budget （〈 200 ℃）. The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility （from 24.84 to 44.84 cm2-V-l.s-1）, increased output resistance （0.42 MΩ at Vgs- Vth = 20 V, a three-fold increase）, a six-fold increase in the self-gain, and decreased sub- threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semicon- ductor FETs in flexible electronics.
文摘Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities, large surface-to-volume ratios, and rapid electrical responses to their surrounding environments. Here, we report the first implementation of a highly sensitive chemical-vapor-deposition-grown multilayer MoSe2 field-effect transistor （FET） in a NO2 gas sensor. This sensor exhibited ultra-high sensitivity （S = ca. 1,907 for NO2 at 300 ppm）, real-time response, and rapid on-off switching. The high sensitivity of our MoSe2 gas sensor is attributed to changes in the gap states near the valence band induced by the NO2 gas absorbed in the MoSe2, which leads to a significant increase in hole current in the off-state regime. Device modeling and quantum transport simulations revealed that the variation of gap states with NO2 concentration is the key mechanism in a MoSe2 FET-based NO2 gas sensor. This comprehensive study, which addresses material growth, device fabrication, characterization, and device simulations, not only indicates the utility of MoSe2 FETs for high-performance chemical sensors, but also establishes a fundamental understanding of how surface chemistry influences carrier transport in layered semiconductor devices.
文摘Various approaches have been proposed for point-of-care diagnostics, and in particular, optical detection is preferred because it is relatively simple and fast. At the same time, field-effect transistor （FET）-based biosensors have attracted great attention because they can provide highly sensitive and label-free detection. In this work we present highly sensitive, epidermal skin-type point-of-care devices with system-level integration of flexible MOS2 FET biosensors, read-out circuits, and light-emitting diode （LEDs） that enable real-time detection of prostate cancer antigens （PSA）. Regardless of the physical forms or mechanical stress conditions, our proposed high-performance MoS2 biosensors can detect a PSA concentration of 1 pg.mL-1 without specific surface treatment for anti-PSA immobilization on the MoS2 surface on which we characterize and confirm physisorption of anti-PSA using Kelvin probe force microscopy （KPFM） and tapping-mode atomic force microscopy （tm-AFM）. Furthermore, current modulation induced by the binding process was stably maintained for longer than 2-3 min. The results indicate that flexible MoS2-based FET biosensors have great potential for point-of-care diagnostics for prostate cancer as well as other biomarkers.
基金the National Research Foundation of Korea(NRF-2022M3D1A2083618,2021R1A2B5B02002167,2021R1I1A1A01060078,and 2021R1C1C1005407)supported by the SKKU Research Fellowship Program of the Sungkyunkwan University and the Institute of Information&Communications Technology Planning&Evaluation(IITP)grant funded by the Korea government(MSIT)(No.2019-0-00421,Artificial Intelligence Graduate School Program(Sungkyunkwan University))supported by the SafeD Inc.and BECS Inc.
文摘With advances in artificial intelligence(AI)-based algorithms,gesture recognition accuracy from sEMG signals has continued to increase.Spatiotemporal multichannel-sEMG signals substantially increase the quantity and reliability of the data for any type of study.Here,we report an array of bipolar stretchable sEMG electrodes with a self-attention-based graph neural network to recognize gestures with high accuracy.The array is designed to spatially cover the skeletal muscles to acquire the regional sampling data of EMG activity from 18 different gestures.The system can differentiate individual static and dynamic gestures with~97%accuracy when training a single trial per gesture.Moreover,a sticky patchwork of holes adhered to an array sensor enables skin-like attributes such as stretchability and water vapor permeability and aids in delivering stable EMG signals.In addition,the recognition accuracy(~95%)remained unchanged even after long-term testing for over 72 h and being reused more than 10 times.
文摘Multilayer MoS2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS2 crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge results of the nanoscale laser confocal time-resolved PL measurements. transfer doping effect, validated by the microscope photoluminescence （PL） and
基金supported in part by the National Research Foundation of Korea(2022M3D1A2083618,2021M3H4A1A02056037,2022H1D3A2A01096362,RS-2023-00237585,RS-2023-00237308)supported in part by Ontario's Ministry of Research,Innovation,and Science through Early Researcher Awards(ER17-13-205)+1 种基金also in part by NSERC Discovery Grant(RGPIN-2020-04070)M.S.is supported in part by the NSERC Canada Graduate Scholarship-Master's(CGS-M)program and the WIN Nanofellowship.
文摘Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security surveillance.While traditional systems rely on separate sensors for different lighting conditions,TMDs can absorb light across a broad-spectrum range.In this study,a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was implemented.The bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition.The WS2-based thin-film transistors(TFTs)exhibit high average mobility,excellent Ion/Ioff,and uniform electrical properties.The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W1(at a wavelength of 405 nm)owing to the photogating effect.Finally,red,green,blue,and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated.The proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing,which could lead to a range of new opportunities in various applications,including night vision,pedestrian detection,various surveillance,and security systems.
文摘AIMS ＆ SCOPENano Research is a peer-reviewed, international and interdisciplinary journal that focuses on all aspects of nanoscience and nanotechnology. Submissions are solicited in all topical areas, ranging from basic aspects of the science of nanoscale materials to practical applications of such materials.
文摘The second affiliation of the authors in the original version of this article was unfortunately wrongly written on the first page, instead of Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 17104, Republic of Korea.
