High-frequency switching of power transistors in power electronic systems can cause electromagnetic emissions.Simple approaches for reducing high-frequency disturbances,such as inserting an additional gate resistor,le...High-frequency switching of power transistors in power electronic systems can cause electromagnetic emissions.Simple approaches for reducing high-frequency disturbances,such as inserting an additional gate resistor,lead to increased power losses.This makes achieving both electromagnetic compatibility and power efficiency difficult.Active gate drivers help to find a trade-off between these two.Typically,only narrow-band disturbances must be reduced.Accordingly,a target signal with a spectrum notched at some frequencies can be defined.The target signal can be reached by a target-signal-oriented control of the transistor’s gate.This leads to steeper switching slopes,such that the power losses are less increased.Generating arbitrary target signals is impossible.The transistor signal exhibits some physical limitations.A constraint satisfaction problem must be solved,and the gate drive signal must be optimized by applying a residual and Newton’s method.The proposed optimization process in the frequency domain is based on the circuit simulation method named“harmonic balance”.Measurements on a DC/DC converter exhibit the benefits of this method.展开更多
With the development of high and new technologies,such as 5G,big data,high-speed railway,renewable energy generation,flexible AC/DC transmission and electric vehicles,the power conversion system as the key support fun...With the development of high and new technologies,such as 5G,big data,high-speed railway,renewable energy generation,flexible AC/DC transmission and electric vehicles,the power conversion system as the key support function is also developing rapidly in the direction of high frequency,high efficiency,high power and high-power density.The electromagnetic environment of the power and energy conversion system becomes more and more complex,which puts forward more stringent requirements for the electromagnetic compatibility design of the system,especially with the technological breakthrough and commercial use of wide bandgap semiconductor power devices represented by SiC and GaN.Electromagnetic interference(EMI)and electromagnetic compatibility(EMC)have become the important challenges to ensure the functionality,safety,reliability and performance of the system.Therefore,it is of great significance to study the EMI and EMC theory and key technologies of power electronics system.展开更多
文摘High-frequency switching of power transistors in power electronic systems can cause electromagnetic emissions.Simple approaches for reducing high-frequency disturbances,such as inserting an additional gate resistor,lead to increased power losses.This makes achieving both electromagnetic compatibility and power efficiency difficult.Active gate drivers help to find a trade-off between these two.Typically,only narrow-band disturbances must be reduced.Accordingly,a target signal with a spectrum notched at some frequencies can be defined.The target signal can be reached by a target-signal-oriented control of the transistor’s gate.This leads to steeper switching slopes,such that the power losses are less increased.Generating arbitrary target signals is impossible.The transistor signal exhibits some physical limitations.A constraint satisfaction problem must be solved,and the gate drive signal must be optimized by applying a residual and Newton’s method.The proposed optimization process in the frequency domain is based on the circuit simulation method named“harmonic balance”.Measurements on a DC/DC converter exhibit the benefits of this method.
文摘With the development of high and new technologies,such as 5G,big data,high-speed railway,renewable energy generation,flexible AC/DC transmission and electric vehicles,the power conversion system as the key support function is also developing rapidly in the direction of high frequency,high efficiency,high power and high-power density.The electromagnetic environment of the power and energy conversion system becomes more and more complex,which puts forward more stringent requirements for the electromagnetic compatibility design of the system,especially with the technological breakthrough and commercial use of wide bandgap semiconductor power devices represented by SiC and GaN.Electromagnetic interference(EMI)and electromagnetic compatibility(EMC)have become the important challenges to ensure the functionality,safety,reliability and performance of the system.Therefore,it is of great significance to study the EMI and EMC theory and key technologies of power electronics system.
