Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interfa...Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interface oxidation treatment and wet etch process were adopted to improve the interface quality of MOS-HEMTs. With capacitance–voltage (C–V) measurement, the density of interface and border traps were calculated to be 1.13 × 10^12 cm^−2 and 6.35 × 10^12 cm^−2, effectively reduced by 27% and 14% compared to controlled devices, respectively. Furthermore, the state density distribution of border traps with large activation energy was analyzed using photo-assisted C–V measurement. It is found that irradiation of monochromatic light results in negative shift of C–V curves, which indicates the electron emission process from border traps. The experimental results reveals that the major border traps have an activation energy about 3.29 eV and the change of post-etch surface treatment process has little effect on this major activation energy.展开更多
Dear Editor,Depending on the perceived threat in the environment,organisms can express a broad spectrum of behaviors,ranging from exploration to defensive behaviors[1,2],such as fear response and avoidance.Generalizat...Dear Editor,Depending on the perceived threat in the environment,organisms can express a broad spectrum of behaviors,ranging from exploration to defensive behaviors[1,2],such as fear response and avoidance.Generalization of fear memory can generate anxiety-related disorders that afflict 10%-30%of individuals worldwide,especially during the epidemic situation[3,4].展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61704124, 11690042, and 61634005).
文摘Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interface oxidation treatment and wet etch process were adopted to improve the interface quality of MOS-HEMTs. With capacitance–voltage (C–V) measurement, the density of interface and border traps were calculated to be 1.13 × 10^12 cm^−2 and 6.35 × 10^12 cm^−2, effectively reduced by 27% and 14% compared to controlled devices, respectively. Furthermore, the state density distribution of border traps with large activation energy was analyzed using photo-assisted C–V measurement. It is found that irradiation of monochromatic light results in negative shift of C–V curves, which indicates the electron emission process from border traps. The experimental results reveals that the major border traps have an activation energy about 3.29 eV and the change of post-etch surface treatment process has little effect on this major activation energy.
基金supported by grants from the National Natural Science Foundation of China(81870852 and 82171199)the Qing Lan Project of Jiangsu Province,the Education Department of Jiangsu Province(18KJA320007)+3 种基金the Natural Science Foundation of Jiangsu Province(BK20181146 and BK20210911)the Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX21_2706,KYCX21_2703,and YCX21_2717)the Program on Basic Research Projects of Xuzhou City(KC21048)the Special Funds for Anesthesia Medical Research of Jiangsu Medical Association SYH-32021-0040(2021035).
文摘Dear Editor,Depending on the perceived threat in the environment,organisms can express a broad spectrum of behaviors,ranging from exploration to defensive behaviors[1,2],such as fear response and avoidance.Generalization of fear memory can generate anxiety-related disorders that afflict 10%-30%of individuals worldwide,especially during the epidemic situation[3,4].
