An n-GaO_(x)thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction.The n-Ga Ox thin film presents a small surface roughness and a large optical band gap...An n-GaO_(x)thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction.The n-Ga Ox thin film presents a small surface roughness and a large optical band gap of 4.85 e V.In addition,the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties.The GaO_(x)/diamond heterojunction shows a type-Ⅱstaggered band configuration,where the valence and conduction band offsets are 1.28 e V and 1.93 e V,respectively.These results confirm the feasibility of the use of n-GaO_(x)as a termination structure for diamond power devices.展开更多
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001)。
文摘An n-GaO_(x)thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction.The n-Ga Ox thin film presents a small surface roughness and a large optical band gap of 4.85 e V.In addition,the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties.The GaO_(x)/diamond heterojunction shows a type-Ⅱstaggered band configuration,where the valence and conduction band offsets are 1.28 e V and 1.93 e V,respectively.These results confirm the feasibility of the use of n-GaO_(x)as a termination structure for diamond power devices.
