In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer prov...In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm^(2).We also adopt the trenched n^(+)-GaN structure such that partial of the n^(+)-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si_(3)N_(4)layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10^(−5)A·cm^(−2)and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm^(−2).Our investigations also find that the pre-deposited Si_(3)N_(4)layer helps suppress the electron capture and transport processes,which enables the reduced dynamic R_(on,sp).展开更多
In the era of big data,the number of images transmitted over the public channel increases exponentially.As a result,it is crucial to devise the efficient and highly secure encryption method to safeguard the sensitive ...In the era of big data,the number of images transmitted over the public channel increases exponentially.As a result,it is crucial to devise the efficient and highly secure encryption method to safeguard the sensitive image.In this paper,an improved sine map(ISM)possessing a larger chaotic region,more complex chaotic behavior and greater unpredictability is proposed and extensively tested.Drawing upon the strengths of ISM,we introduce a lightweight symmetric image encryption cryptosystem in wavelet domain(WDLIC).The WDLIC employs selective encryption to strike a satisfactory balance between security and speed.Initially,only the low-frequency-low-frequency component is chosen to encrypt utilizing classic permutation and diffusion.Then leveraging the statistical properties in wavelet domain,Gaussianization operation which opens the minds of encrypting image information in wavelet domain is first proposed and employed to all sub-bands.Simulations and theoretical analysis demonstrate the high speed and the remarkable effectiveness of WDLIC.展开更多
基金supported by National Natural Science Foundation of China under grant U23A20361Key Area R&D Program of Guangdong Province under grant 2022B0701180001.
文摘In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm^(2).We also adopt the trenched n^(+)-GaN structure such that partial of the n^(+)-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si_(3)N_(4)layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10^(−5)A·cm^(−2)and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm^(−2).Our investigations also find that the pre-deposited Si_(3)N_(4)layer helps suppress the electron capture and transport processes,which enables the reduced dynamic R_(on,sp).
基金Project supported by the Key Area Research and Development Program of Guangdong Province,China(Grant No.2022B0701180001)the National Natural Science Foundation of China(Grant No.61801127)+1 种基金the Science Technology Planning Project of Guangdong Province,China(Grant Nos.2019B010140002 and 2020B111110002)the Guangdong–Hong Kong–Macao Joint Innovation Field Project(Grant No.2021A0505080006).
文摘In the era of big data,the number of images transmitted over the public channel increases exponentially.As a result,it is crucial to devise the efficient and highly secure encryption method to safeguard the sensitive image.In this paper,an improved sine map(ISM)possessing a larger chaotic region,more complex chaotic behavior and greater unpredictability is proposed and extensively tested.Drawing upon the strengths of ISM,we introduce a lightweight symmetric image encryption cryptosystem in wavelet domain(WDLIC).The WDLIC employs selective encryption to strike a satisfactory balance between security and speed.Initially,only the low-frequency-low-frequency component is chosen to encrypt utilizing classic permutation and diffusion.Then leveraging the statistical properties in wavelet domain,Gaussianization operation which opens the minds of encrypting image information in wavelet domain is first proposed and employed to all sub-bands.Simulations and theoretical analysis demonstrate the high speed and the remarkable effectiveness of WDLIC.
