In this paper, a series of Sb-doped and Bi-doped Cu_(2)Sn_(1-x)M_(x)Se_(3) samples(M = Sb, Bi) are prepared by vacuum melting combined with the spark plasma sintering process. The effects of different atomic doping am...In this paper, a series of Sb-doped and Bi-doped Cu_(2)Sn_(1-x)M_(x)Se_(3) samples(M = Sb, Bi) are prepared by vacuum melting combined with the spark plasma sintering process. The effects of different atomic doping amounts on their properties are discussed. Structural studies indicate that all obtained samples comprise a single Cu_(2)SnSe_(3) phase. Sb and Bi atoms are experimentally demonstrated to be efficient cation dopants for increasing the transport performance. Compared with that doping on the cation site,Bi doping is much more efficient in increasing the electron concentration of the Cu_(2)SnSe_(3) system. Ultimately, a high figure of merit of 0.36 is achieved in the Cu_(2)Sn_(0.94)Sb_(0.06) Se_(3) sample at 773 K due to the enhanced power factor and lowered lattice thermal conductivity,which are 1.73 times higher than those of the pure sample.Our results provide an efficient approach to enhance thermoelectric performance via other doping atoms, which could also be applied to copper-based chalcogenide materials.展开更多
Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu dop...Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m^-1K^-2 at 480K, and the highest ZT achieved is 0.87 near the temperature of 483K.展开更多
This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_（4.4）Sb_3 Ge_xSn_3（x = 0–0.15）. The prepared samples...This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_（4.4）Sb_3 Ge_xSn_3（x = 0–0.15）. The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability.Compared with the polycrystalline Ge-substituted β-Zn_4Sb_3, the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10~4S·m^（-1） at room temperature for the x = 0.1 sample.The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10^（-3）W·m^（-1）·K^（-2） at 543 K.展开更多
基金financially supported by the National Key Research and Development Program of China(No.2019YFA0210003)the National Natural Science Foundation of China(Nos.11775163 and 11875208)。
文摘In this paper, a series of Sb-doped and Bi-doped Cu_(2)Sn_(1-x)M_(x)Se_(3) samples(M = Sb, Bi) are prepared by vacuum melting combined with the spark plasma sintering process. The effects of different atomic doping amounts on their properties are discussed. Structural studies indicate that all obtained samples comprise a single Cu_(2)SnSe_(3) phase. Sb and Bi atoms are experimentally demonstrated to be efficient cation dopants for increasing the transport performance. Compared with that doping on the cation site,Bi doping is much more efficient in increasing the electron concentration of the Cu_(2)SnSe_(3) system. Ultimately, a high figure of merit of 0.36 is achieved in the Cu_(2)Sn_(0.94)Sb_(0.06) Se_(3) sample at 773 K due to the enhanced power factor and lowered lattice thermal conductivity,which are 1.73 times higher than those of the pure sample.Our results provide an efficient approach to enhance thermoelectric performance via other doping atoms, which could also be applied to copper-based chalcogenide materials.
基金Supported by the National Natural Science Foundation of China under Grant No 51262032
文摘Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m^-1K^-2 at 480K, and the highest ZT achieved is 0.87 near the temperature of 483K.
基金Project supported by the National Natural Science Foundation of China(Grant No.51262032)
文摘This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_（4.4）Sb_3 Ge_xSn_3（x = 0–0.15）. The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability.Compared with the polycrystalline Ge-substituted β-Zn_4Sb_3, the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10~4S·m^（-1） at room temperature for the x = 0.1 sample.The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10^（-3）W·m^（-1）·K^（-2） at 543 K.
