Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically ...Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.展开更多
基金We acknowledge the financial support from the National Natural Science Foundation of China(Nos.11874427,11874423).Dr.H an H uang acknowledges support from the Innovation-Driven project of Central South University(No.2017CX018)and from the Natural Science Foundation of H unan province(No.2016JJ1021).Mr.Xiaoming Zheng acknowledges the support from the Fundamental Research Funds for the Central Universities of Central South University(No.2017zzts066).
文摘Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.
