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Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures
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作者 Mikhail K.Sotnichuk Anton V.Ikonnikov +3 位作者 Dmitry R.Khokhlov Nikolay N.Mikhailov sergey a.dvoretsky Vladimir I.Gavrilenko 《Journal of Semiconductors》 2025年第4期89-98,共10页
In this work,we studied the persistent photoconductivity(PPC)spectra in single HgTe/CdHgTe quantum wells with different growth parameters and different types of dark conductivity.The studies were performed in a wide r... In this work,we studied the persistent photoconductivity(PPC)spectra in single HgTe/CdHgTe quantum wells with different growth parameters and different types of dark conductivity.The studies were performed in a wide radiation quantum energy range of 0.62–3.1 eV both at T=4.2 K and at T=77 K.Common features of the PPC spectra for all structures were revealed,and their relation to the presence of a CdTe cap layer in all structures and the appropriate cadmium fraction in the CdHgTe barrier layers was shown.One of the features was associated with the presence of a deep level in the CdTe layer.In addition,the oscillatory behavior of the PPC spectra in the region from 0.8–1.1 eV to 1.2–1.5 eV was observed.It is associated with the cascade emission of longitudinal optical phonons in CdHgTe barrier. 展开更多
关键词 quantum well CdHgTe persistent photoconductivity HETEROSTRUCTURE SPECTROSCOPY
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