Oxide semimetals exhibiting both nontrivial topological characteristics stand as exemplary parent compounds and multiple degrees of freedom,offering a promise for the realization of novel electronic states.In this wor...Oxide semimetals exhibiting both nontrivial topological characteristics stand as exemplary parent compounds and multiple degrees of freedom,offering a promise for the realization of novel electronic states.In this work,we report the structural and transport phase transition in an oxide semimetal,SrNbO_(3),achieved through effective anion doping.Notably,the resistivity increased by more than three orders of magnitude at room temperature upon nitrogendoping.The extent of electronic modulation in SrNbO_(3)is strongly correlated with misfit strain,underscoring its phase instability to both chemical doping and crystallographic symmetry variations.Using first-principles calculations,we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO_(3−δ)N_(δ).Consequently,a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3.This investigation shows effective anion engineering in oxide semimetals,offering pathways for manipulating their physical properties.展开更多
基金CAS Project for Young Scientists in Basic Research,Grant/Award Number:YSBR‐084China Postdoctoral Science Foundation,Grant/Award Number:2022M723353+4 种基金Jiangsu Funding Program for Excellent Postdoctoral TalentStrategic Priority Research Program(B)of the Chinese Academy of Sciences,Grant/Award Number:XDB33030200National Natural Science Foundation of China,Grant/Award Numbers:11974390,U22A20263,52250308,12347185National Key Basic Research Program of China,Grant/Award Numbers:2020YFA0309100,2019YFA0308500Postdoctoral Fellowship Program of CPSF,Grant/Award Number:GZC20230443。
文摘Oxide semimetals exhibiting both nontrivial topological characteristics stand as exemplary parent compounds and multiple degrees of freedom,offering a promise for the realization of novel electronic states.In this work,we report the structural and transport phase transition in an oxide semimetal,SrNbO_(3),achieved through effective anion doping.Notably,the resistivity increased by more than three orders of magnitude at room temperature upon nitrogendoping.The extent of electronic modulation in SrNbO_(3)is strongly correlated with misfit strain,underscoring its phase instability to both chemical doping and crystallographic symmetry variations.Using first-principles calculations,we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO_(3−δ)N_(δ).Consequently,a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3.This investigation shows effective anion engineering in oxide semimetals,offering pathways for manipulating their physical properties.
