Nonlayered two-dimensional(2D)materials have attracted increasing attention,due to novel physical properties,unique surface structure,and high compatibility with microfabrication technique.However,owing to the inheren...Nonlayered two-dimensional(2D)materials have attracted increasing attention,due to novel physical properties,unique surface structure,and high compatibility with microfabrication technique.However,owing to the inherent strong covalent bonds,the direct synthesis of 2D planar structure from nonlayered materials,especially for the realization of large-size ultrathin 2D nonlayered materials,is still a huge challenge.Here,a general atomic substitution conversion strategy is proposed to synthesize large-size,ultrathin nonlayered 2D materials.Taking nonlayered CdS as a typical example,large-size ultrathin nonlayered CdS single-crystalline flakes are successfully achieved via a facile low-temperature chemical sulfurization method,where pre-grown layered CdI2 flakes are employed as the precursor via a simple hot plate assisted vertical vapor deposition method.The size and thickness of CdS flakes can be controlled by the CdI2 precursor.The growth mechanism is ascribed to the chemical substitution reaction from I to S atoms between CdI2 and CdS,which has been evidenced by experiments and theoretical calculations.The atomic substitution conversion strategy demonstrates that the existing 2D layered materials can serve as the precursor for difficult-to-synthesize nonlayered 2D materials,providing a bridge between layered and nonlayered materials,meanwhile realizing the fabrication of large-size ultrathin nonlayered 2D materials.展开更多
Two-dimensional(2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices, owing to their fascinating physical properties and superlative optoelectronic performa...Two-dimensional(2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices, owing to their fascinating physical properties and superlative optoelectronic performance. Chemical vapor deposition(CVD) is considered to be an efficient method for large-scale preparation of 2D materials toward practical applications.However, the high melting points of metal precursors and the thermodynamics instabilities of metastable phases limit the direct CVD synthesis of plenty of 2D materials. The salt has recently been introduced into the CVD process, which proved to be effective to address these issues. In this review, we highlighted the latest progress in the salt-assisted CVD growth of 2D materials, including layered and non-layered crystals. Firstly, strategies of adding salts are summarized. Then, the salt-assisted growth of various layered materials is presented, emphasizing on the transition metal chalcogenides of stable and metastable phases. Furthermore, strategies to grow ultrathin non-layered materials are discussed. We provide viewpoints into the techniques of using salt, the effects of salt, and the growth mechanisms of 2D crystals. Finally, we offer the challenges to be overcome and further research directions of this emerging salt-assisted CVD technique.展开更多
Two-dimensional semiconductors have attracted immense research interests owing to their intriguing properties and promising applications in electronic and optoelectronic devices.However,the performance of these device...Two-dimensional semiconductors have attracted immense research interests owing to their intriguing properties and promising applications in electronic and optoelectronic devices.However,the performance of these devices is drastically hindered by the large Schottky barrier at the electric contact interface,which is hardly tunable due to the Fermi level pinning effect.In this review,we will analyze the root causes of the contact problems for the two-dimensional semiconductor devices and summarize the strategies on the basis of different contact geometries,aiming to lift out the Fermi level pinning effect and achieve the ohmic contact.Moreover,the remarkable improvement of the device performance thanks to these optimized contacts will be emphasized.At the end,the merits and limitations of these strategies will be discussed as well,which potentially gives a guideline for handling the electric contact issues in two-dimensional semiconductors devices.展开更多
Broadband photodetectors with polarization-sensitive ability have received extraordinary attention for modern optoelectronic devices.Ideal photodetectors should possess high responsivity,fast response,and good stabili...Broadband photodetectors with polarization-sensitive ability have received extraordinary attention for modern optoelectronic devices.Ideal photodetectors should possess high responsivity,fast response,and good stability,which are rare to meet at the same time in one low-symmetric two-dimentional(2D)material.In this work,neodymium diantimonides(RSb_(2)),a member of light rare-earth diantimonides RSb_(2)(R=La–Nd,Sm)with low-symmetry structure,is introduced as a fascinating highly anisotropic 2D material for broadband detection(532 nm to 4μm).The photodetector exhibits a responsivity of 0.49 mA·W^(−1)with 15μs response time at 532 nm and highly stable performance under ambient conditions over 8 months.Furthermore,we identify the polarization-sensitive photoresponse of the detector and demonstrate a high anisotropic factor~1.6.In addition,strong inplane anisotropy is revealed by anisotropic phonon response and the photodetection mechanism is investigated by scanning photocurrent microscopy measurements.This pioneer work on RSb_(2)paves the way for further exploration of 2D RSb_(2)for high performance polarized photodetectors with fast photothermoelectric response.展开更多
Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large a...Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large and homogeneous strain on these 2D materials,including the typical semiconductor MoS_(2),remains cumbersome.Here we report a facile strategy for the fabrication of highly strained MoS_(2) via chalcogenide substitution reaction(CSR)of MoTe_(2) with lattice inheritance.The MoS_(2)resulting from the sulfurized MoTe_(2) sustains ultra large in-plane strain(approaching its strength limit~10%)with great homogeneity.Furthermore,the strain can be deterministically and continuously tuned to~1.5%by simply varying the processing temperature.Thanks to the fine control of our CSR process,we demonstrate a heterostructure of strained MoS_(2)/MoTe_(2)with abrupt interface.Finally,we verify that such a large strain potentially allows the modulation of MoS_(2) bandgap over an ultra-broad range(~1 e V).Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.展开更多
基金This work was supported by National Natural Science Foundation of China(21825103,11774044,52072059)the Hubei Provincial Natural Science Foundation of China(2019CFA002)+1 种基金the Fundamental Research Funds for the Central Universities(2019kfyXMBZ018 and 2020kfyXJJS050)We also thank the technical support from Analytical and Testing Center in Huazhong University of Science and Technology.
文摘Nonlayered two-dimensional(2D)materials have attracted increasing attention,due to novel physical properties,unique surface structure,and high compatibility with microfabrication technique.However,owing to the inherent strong covalent bonds,the direct synthesis of 2D planar structure from nonlayered materials,especially for the realization of large-size ultrathin 2D nonlayered materials,is still a huge challenge.Here,a general atomic substitution conversion strategy is proposed to synthesize large-size,ultrathin nonlayered 2D materials.Taking nonlayered CdS as a typical example,large-size ultrathin nonlayered CdS single-crystalline flakes are successfully achieved via a facile low-temperature chemical sulfurization method,where pre-grown layered CdI2 flakes are employed as the precursor via a simple hot plate assisted vertical vapor deposition method.The size and thickness of CdS flakes can be controlled by the CdI2 precursor.The growth mechanism is ascribed to the chemical substitution reaction from I to S atoms between CdI2 and CdS,which has been evidenced by experiments and theoretical calculations.The atomic substitution conversion strategy demonstrates that the existing 2D layered materials can serve as the precursor for difficult-to-synthesize nonlayered 2D materials,providing a bridge between layered and nonlayered materials,meanwhile realizing the fabrication of large-size ultrathin nonlayered 2D materials.
基金supported by the National Natural Science Foundation of China (21825103, 51727809)the Fundamental Research Funds for the Central University (2019kfy XMBZ018)the project funded by China Postdoctoral Science Foundation (2018M642832)
文摘Two-dimensional(2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices, owing to their fascinating physical properties and superlative optoelectronic performance. Chemical vapor deposition(CVD) is considered to be an efficient method for large-scale preparation of 2D materials toward practical applications.However, the high melting points of metal precursors and the thermodynamics instabilities of metastable phases limit the direct CVD synthesis of plenty of 2D materials. The salt has recently been introduced into the CVD process, which proved to be effective to address these issues. In this review, we highlighted the latest progress in the salt-assisted CVD growth of 2D materials, including layered and non-layered crystals. Firstly, strategies of adding salts are summarized. Then, the salt-assisted growth of various layered materials is presented, emphasizing on the transition metal chalcogenides of stable and metastable phases. Furthermore, strategies to grow ultrathin non-layered materials are discussed. We provide viewpoints into the techniques of using salt, the effects of salt, and the growth mechanisms of 2D crystals. Finally, we offer the challenges to be overcome and further research directions of this emerging salt-assisted CVD technique.
基金supported by the National Natural Science Foundation of China(21825103,51727809)the National Basic Research Program of China(2015CB932600)the Fundamental Research Funds for the Central University(2019kfy XMBZ018)
文摘Two-dimensional semiconductors have attracted immense research interests owing to their intriguing properties and promising applications in electronic and optoelectronic devices.However,the performance of these devices is drastically hindered by the large Schottky barrier at the electric contact interface,which is hardly tunable due to the Fermi level pinning effect.In this review,we will analyze the root causes of the contact problems for the two-dimensional semiconductor devices and summarize the strategies on the basis of different contact geometries,aiming to lift out the Fermi level pinning effect and achieve the ohmic contact.Moreover,the remarkable improvement of the device performance thanks to these optimized contacts will be emphasized.At the end,the merits and limitations of these strategies will be discussed as well,which potentially gives a guideline for handling the electric contact issues in two-dimensional semiconductors devices.
基金supported by the National Natural Science Foundation of China(No.51902001)the Recruitment Program for Leading Talent Team of Anhui Province(2019-16)+1 种基金the Natural Science Foundation of Anhui Province(No.1908085QE17)the Open Research Fund of Advanced Laser Technology Laboratory of Anhui Province(No.AHL2020KF02).
文摘Broadband photodetectors with polarization-sensitive ability have received extraordinary attention for modern optoelectronic devices.Ideal photodetectors should possess high responsivity,fast response,and good stability,which are rare to meet at the same time in one low-symmetric two-dimentional(2D)material.In this work,neodymium diantimonides(RSb_(2)),a member of light rare-earth diantimonides RSb_(2)(R=La–Nd,Sm)with low-symmetry structure,is introduced as a fascinating highly anisotropic 2D material for broadband detection(532 nm to 4μm).The photodetector exhibits a responsivity of 0.49 mA·W^(−1)with 15μs response time at 532 nm and highly stable performance under ambient conditions over 8 months.Furthermore,we identify the polarization-sensitive photoresponse of the detector and demonstrate a high anisotropic factor~1.6.In addition,strong inplane anisotropy is revealed by anisotropic phonon response and the photodetection mechanism is investigated by scanning photocurrent microscopy measurements.This pioneer work on RSb_(2)paves the way for further exploration of 2D RSb_(2)for high performance polarized photodetectors with fast photothermoelectric response.
基金supported by the National Natural Science Foundation of China(21825103,52001165)Natural Science Foundation of Hubei Province(2019CFA002)+2 种基金Natural Science Foundation of Jiangsu Province(BK20200475)the Fundamental Research Funds for the Central Universities(2019kfy XMBZ018,30921011215)supports from Analytical and Testing Center in Huazhong University of Science and Technology as well as Nanostructure Research Center(NRC)supported by the Fundamental Research Funds for the Central Universities(WUT:2019III012GX,2020III002GX)。
文摘Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large and homogeneous strain on these 2D materials,including the typical semiconductor MoS_(2),remains cumbersome.Here we report a facile strategy for the fabrication of highly strained MoS_(2) via chalcogenide substitution reaction(CSR)of MoTe_(2) with lattice inheritance.The MoS_(2)resulting from the sulfurized MoTe_(2) sustains ultra large in-plane strain(approaching its strength limit~10%)with great homogeneity.Furthermore,the strain can be deterministically and continuously tuned to~1.5%by simply varying the processing temperature.Thanks to the fine control of our CSR process,we demonstrate a heterostructure of strained MoS_(2)/MoTe_(2)with abrupt interface.Finally,we verify that such a large strain potentially allows the modulation of MoS_(2) bandgap over an ultra-broad range(~1 e V).Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.
