Despite recent dramatic improvements in the electronic characteristics of stretchable organic fieldeffect transistors(FETs),their low operational stability remains a bottleneck for their use in practical applications....Despite recent dramatic improvements in the electronic characteristics of stretchable organic fieldeffect transistors(FETs),their low operational stability remains a bottleneck for their use in practical applications.Here,the operational stability,especially the bias-stress stability,of semiconducting polymer-based FETs under various tensile strains is investigated.Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs.Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content,which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain.The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules.This work provides new insights for the development of bias-stable stretchable OFETs.展开更多
基金supported by the National Research Foundation of Korea(NRF)grants(NRF-2020R1A2C3004477,RS-2022-00166297)funded by the Ministry of Science and ICT of the Korean government.
文摘Despite recent dramatic improvements in the electronic characteristics of stretchable organic fieldeffect transistors(FETs),their low operational stability remains a bottleneck for their use in practical applications.Here,the operational stability,especially the bias-stress stability,of semiconducting polymer-based FETs under various tensile strains is investigated.Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs.Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content,which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain.The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules.This work provides new insights for the development of bias-stable stretchable OFETs.
