Radial distribution of vapor local parameters, including local void fraction, interfacial velocity, bubblesize, bubble frequency and interfacial area concentration, are investigated through the measurement in an upwar...Radial distribution of vapor local parameters, including local void fraction, interfacial velocity, bubblesize, bubble frequency and interfacial area concentration, are investigated through the measurement in an upwardboiling tube using dual-sensor optical probe. In addition, a new local parameter -"local bubble number concentra-tion" is developed on the basis of bubble frequency. The analysis shows that this parameter can reflect bubble numberdensity in space, and has clear physical meaning.展开更多
Based on the electrical monitoring parameter analysis, physical failure (hot spot) analysis and yield graphics and process characteristics, suspect the subthreshold leakage of kernel device (Core Device) and static re...Based on the electrical monitoring parameter analysis, physical failure (hot spot) analysis and yield graphics and process characteristics, suspect the subthreshold leakage of kernel device (Core Device) and static register (SRAM) circuit leakage affects the total static power consumption, the corresponding failure model, and through the channel doping ion injection condition optimization, gate polysilicon deposition thickness adjustment and the improvement of N inverted well (NW), finally solve the 90nm embedded flash memory chip.展开更多
基金Supported by the National Science Foundation of China(No.59995460-1) and Nuclear Industry Science Foundation (No.Y7100E51001)
文摘Radial distribution of vapor local parameters, including local void fraction, interfacial velocity, bubblesize, bubble frequency and interfacial area concentration, are investigated through the measurement in an upwardboiling tube using dual-sensor optical probe. In addition, a new local parameter -"local bubble number concentra-tion" is developed on the basis of bubble frequency. The analysis shows that this parameter can reflect bubble numberdensity in space, and has clear physical meaning.
文摘Based on the electrical monitoring parameter analysis, physical failure (hot spot) analysis and yield graphics and process characteristics, suspect the subthreshold leakage of kernel device (Core Device) and static register (SRAM) circuit leakage affects the total static power consumption, the corresponding failure model, and through the channel doping ion injection condition optimization, gate polysilicon deposition thickness adjustment and the improvement of N inverted well (NW), finally solve the 90nm embedded flash memory chip.
