In this paper we simulate and analyze a sample of slow light semiconducting device with quantum dot structure based on coherent population oscillation (CPO). The simulation is conducted to enhance the main parameters ...In this paper we simulate and analyze a sample of slow light semiconducting device with quantum dot structure based on coherent population oscillation (CPO). The simulation is conducted to enhance the main parameters of slow light device and a method is presented for setting the output specifications of this kind of devices. In this paper, we deal with changing the size of quantum dot to find the ideal size. The simulation results indicate that as the size of quantum dot changes properly (with reducing more than 50 percent of quantum dots both radius and height), then the slope of diagram of the real part of refractive index increases significantly so that the Slow Down Factor (SDF) predicted to be18 times greater. Analysis and simulations based on cylinderical quantum dots structure slow light devices based on exitonic cpo.展开更多
In pursuit of energy-efficient optical interconnect,the silicon microring modulator(Si-MRM)has emerged as a pivotal device offering an ultra-compact footprint and capability of on-chip wavelength division multiplexing...In pursuit of energy-efficient optical interconnect,the silicon microring modulator(Si-MRM)has emerged as a pivotal device offering an ultra-compact footprint and capability of on-chip wavelength division multiplexing(WDM).This paper presents a 1×4 metal-oxide-semiconductor capacitor(MOSCAP)Si-MRM array gated by high-mobility titanium-doped indium oxide(ITiO),which was fabricated by combining Intel’s high-volume manufacturing process and the transparent conductive oxide(TCO)patterning with the university facility.The 1×4 Si-MRM array exhibits a high electro-optic(E-O)efficiency with V_(π)·L of 0.12 V·cm and achieves a modulation rate of(3×25+1×15)Gb/s with a measured bandwidth of 14 GHz.Additionally,it can perform on-chip WDM modulation at four equally spaced wavelengths without using thermal heaters.The process compatibility between silicon photonics and TCO materials is verified by such an industry-university co-fabrication approach for the MOSCAP Si-MRM array and demonstrated enhanced performance from heterogeneous integration.展开更多
文摘In this paper we simulate and analyze a sample of slow light semiconducting device with quantum dot structure based on coherent population oscillation (CPO). The simulation is conducted to enhance the main parameters of slow light device and a method is presented for setting the output specifications of this kind of devices. In this paper, we deal with changing the size of quantum dot to find the ideal size. The simulation results indicate that as the size of quantum dot changes properly (with reducing more than 50 percent of quantum dots both radius and height), then the slope of diagram of the real part of refractive index increases significantly so that the Slow Down Factor (SDF) predicted to be18 times greater. Analysis and simulations based on cylinderical quantum dots structure slow light devices based on exitonic cpo.
基金Intel Corporation(76084461)National Science Foundation(2240352)+3 种基金Defense Advanced Research Projects Agency(N660012424000)Army Research Office(W911NF2410165)Air Force Office of Scientific Research(FA9550-20-1-0151)National Aeronautics and Space Administration(80NSSC23K0195).
文摘In pursuit of energy-efficient optical interconnect,the silicon microring modulator(Si-MRM)has emerged as a pivotal device offering an ultra-compact footprint and capability of on-chip wavelength division multiplexing(WDM).This paper presents a 1×4 metal-oxide-semiconductor capacitor(MOSCAP)Si-MRM array gated by high-mobility titanium-doped indium oxide(ITiO),which was fabricated by combining Intel’s high-volume manufacturing process and the transparent conductive oxide(TCO)patterning with the university facility.The 1×4 Si-MRM array exhibits a high electro-optic(E-O)efficiency with V_(π)·L of 0.12 V·cm and achieves a modulation rate of(3×25+1×15)Gb/s with a measured bandwidth of 14 GHz.Additionally,it can perform on-chip WDM modulation at four equally spaced wavelengths without using thermal heaters.The process compatibility between silicon photonics and TCO materials is verified by such an industry-university co-fabrication approach for the MOSCAP Si-MRM array and demonstrated enhanced performance from heterogeneous integration.
