The diffusion of nitrogen atom in Cr thin film is studied. The temperature of the film under ion beam bombarding was measured by a new method and discussed theoretically. The temperature measured by means of thin film...The diffusion of nitrogen atom in Cr thin film is studied. The temperature of the film under ion beam bombarding was measured by a new method and discussed theoretically. The temperature measured by means of thin film resistor gave a same level of volume. On the basis of the conservation of energy in equilibrium state, a semi-theoretical formula has been derived. The factors ion beam assisted diffusion were discussed. The result of AES analysis indicates that the arrangement of N atoms is long and smooth. HREM analysis and dynamic resistance measurement show that the Cr-nitride formed by N^+ implantation is in the near surface layers and can not grow very deep. The assemble of N was observed by means of TEM.展开更多
文摘The diffusion of nitrogen atom in Cr thin film is studied. The temperature of the film under ion beam bombarding was measured by a new method and discussed theoretically. The temperature measured by means of thin film resistor gave a same level of volume. On the basis of the conservation of energy in equilibrium state, a semi-theoretical formula has been derived. The factors ion beam assisted diffusion were discussed. The result of AES analysis indicates that the arrangement of N atoms is long and smooth. HREM analysis and dynamic resistance measurement show that the Cr-nitride formed by N^+ implantation is in the near surface layers and can not grow very deep. The assemble of N was observed by means of TEM.
