Nowadays,succeeding safe communication and protection-sensitive data from unauthorized access above public networks are the main worries in cloud servers.Hence,to secure both data and keys ensuring secured data storag...Nowadays,succeeding safe communication and protection-sensitive data from unauthorized access above public networks are the main worries in cloud servers.Hence,to secure both data and keys ensuring secured data storage and access,our proposed work designs a Novel Quantum Key Distribution(QKD)relying upon a non-commutative encryption framework.It makes use of a Novel Quantum Key Distribution approach,which guarantees high level secured data transmission.Along with this,a shared secret is generated using Diffie Hellman(DH)to certify secured key generation at reduced time complexity.Moreover,a non-commutative approach is used,which effectively allows the users to store and access the encrypted data into the cloud server.Also,to prevent data loss or corruption caused by the insiders in the cloud,Optimized Genetic Algorithm(OGA)is utilized,which effectively recovers the data and retrieve it if the missed data without loss.It is then followed with the decryption process as if requested by the user.Thus our proposed framework ensures authentication and paves way for secure data access,with enhanced performance and reduced complexities experienced with the prior works.展开更多
The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated ...The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, lnGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance gm of 1050 mS/mm, current gain cut-off frequency f of 350 GHz and power gain cut-off frequency fmax of 340 GHz. At room temperature the measured carrier mobility （μ）, sheet charge carrier density （ns） and breakdown voltage are 1580 cm2/（V.s）, 1.9× 1013 cm-2, and 10.7 V respectively. The superla- tives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.展开更多
文摘Nowadays,succeeding safe communication and protection-sensitive data from unauthorized access above public networks are the main worries in cloud servers.Hence,to secure both data and keys ensuring secured data storage and access,our proposed work designs a Novel Quantum Key Distribution(QKD)relying upon a non-commutative encryption framework.It makes use of a Novel Quantum Key Distribution approach,which guarantees high level secured data transmission.Along with this,a shared secret is generated using Diffie Hellman(DH)to certify secured key generation at reduced time complexity.Moreover,a non-commutative approach is used,which effectively allows the users to store and access the encrypted data into the cloud server.Also,to prevent data loss or corruption caused by the insiders in the cloud,Optimized Genetic Algorithm(OGA)is utilized,which effectively recovers the data and retrieve it if the missed data without loss.It is then followed with the decryption process as if requested by the user.Thus our proposed framework ensures authentication and paves way for secure data access,with enhanced performance and reduced complexities experienced with the prior works.
文摘The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, lnGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance gm of 1050 mS/mm, current gain cut-off frequency f of 350 GHz and power gain cut-off frequency fmax of 340 GHz. At room temperature the measured carrier mobility （μ）, sheet charge carrier density （ns） and breakdown voltage are 1580 cm2/（V.s）, 1.9× 1013 cm-2, and 10.7 V respectively. The superla- tives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.
