The effect of doped-ZnO transparent conductive oxide （TCO） with metal （Ag）-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dop...The effect of doped-ZnO transparent conductive oxide （TCO） with metal （Ag）-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements （such as B, A1, Ga, In and Sn） with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-InGaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO：Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes. The device achieves open circuit voltage -2.525 V, short circuit current -4.256 mA/cm^2, fill factor -87.86% and efficiency -9.22% under 1 Sun, air mass 1.5 global illumination.展开更多
基金TEQIP-II for funding towards Silvaco TCAD Tool for carrying out the research work
文摘The effect of doped-ZnO transparent conductive oxide （TCO） with metal （Ag）-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements （such as B, A1, Ga, In and Sn） with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-InGaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO：Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes. The device achieves open circuit voltage -2.525 V, short circuit current -4.256 mA/cm^2, fill factor -87.86% and efficiency -9.22% under 1 Sun, air mass 1.5 global illumination.
