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Novel three-body nano-abrasive wear mechanism 被引量:4
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作者 ruling chen Shaoxian LI 《Friction》 SCIE EI CAS CSCD 2022年第5期677-687,共11页
Current three-body abrasive wear theories are based on a macroscale abrasive indentation process,and these theories claim that material wear cannot be achieved without damaging the hard mating surface.In this study,th... Current three-body abrasive wear theories are based on a macroscale abrasive indentation process,and these theories claim that material wear cannot be achieved without damaging the hard mating surface.In this study,the process of three-body nano-abrasive wear of a system including a single crystalline silicon substrate,an amorphous silica cluster,and a polyurethane pad,based on a chemical mechanical polishing(CMP)process,is investigated via molecular dynamics simulations.The cluster slid in a suspended state in smooth regions and underwent rolling impact in the asperity regions of the silicon surface,realizing non-damaging monoatomic material removal.This proves that indentation-plowing is not necessary when performing CMP material removal.Therefore,a non-indentation rolling-sliding adhesion theory for three-body nano-abrasive wear between ultrasoft/hard mating surfaces is proposed.This wear theory not only unifies current mainstream CMP material removal theories,but also clarifies that monoatomic material wear without damage can be realized when the indentation depth is less than zero,thereby perfecting the relationship between material wear and surface damage.These results provide new understanding regarding the CMP microscopic material removal mechanism as well as new research avenues for three-body abrasive wear theory at the monoatomic scale. 展开更多
关键词 wear mechanism material removal mechanism three-body abrasive wear chemical mechanical polishing(CMP) molecular dynamics simulation
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Study on the influence of standoff distance on substrate damage under an abrasive water jet process by molecular dynamics simulation 被引量:2
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作者 ruling chen Di ZHANG Yihua WU 《Friction》 SCIE CSCD 2018年第2期195-207,共13页
The process of a cluster-containing water jet impinging on a monocrystalline silicon substrate was studied by molecular dynamics simulation. The results show that as the standoff distance increases, the jet will gradu... The process of a cluster-containing water jet impinging on a monocrystalline silicon substrate was studied by molecular dynamics simulation. The results show that as the standoff distance increases, the jet will gradually diverge. As a result, the solidified water film between the cluster and the substrate becomes "thicker" and "looser". The "thicker" and "looser" water film will then consume more input energy to achieve complete solidification, resulting in the stress region and the high-pressure region of the silicon substrate under small standoff distances to be significantly larger than those under large standoff distances. Therefore, the degree of damage sustained by the substrate will first experience a small change and then decrease quickly as the standoff distance increases. In summary, the occurrence and maintenance of complete solidification of the confined water film between the cluster and the substrate plays a decisive role in the level of damage formation on the silicon substrate. These findings are helpful for exploring the mechanism of an abrasive water jet. 展开更多
关键词 standoff distance crystalline silicon substrate abrasive water jet molecular dynamics simulation
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