In_(2)O_(3)-based TFTs have garnered widespread attention due to their higher mobilities than amorphous silicon.Previous studies have indicated that rare earth doping can enhance the NBIS stability of TFTs,but this of...In_(2)O_(3)-based TFTs have garnered widespread attention due to their higher mobilities than amorphous silicon.Previous studies have indicated that rare earth doping can enhance the NBIS stability of TFTs,but this often results in a decrease in mobility.To improve the mobility of TFTs while maintaining stability,we incorporated Mo and Pr into In_(2)O_(3),fabricating InPrMoO TFTs.Mo doping is believed to positively affect In_(2)O_(3)through reducing porosity and defects.Pr doping has been proposed as a potential strategy to enhance the NBIS stability of In_(2)O_(3).A nondestructiveμPCD detector was employed to characterize the local defect states of the film.X-ray photoelectron spectroscopy data demonstrate that the InPrMoO film with 0.8 mol%Mo doping has the lowest concentration of oxygen vacancies(Vo).TFTs fabricated using the InPrMoO film doped with an optimized concentration of 0.8 mol%Mo exhibit superior electrical properties(μ_(sat)=12.2 cm^(2)/V·s,V_(th)=1.6 V,I_(on)/I_(off)=2.17×10^(6),and SS=0.47 V/dec)and the minimalΔVth under NBS/PBS/NBIS=−0.65 V/0.79 V/−0.70 V.The synergistic effect of Mo and Pr doping has led to enhanced film uniformity and density,consequently improving the mobility and stability of the TFTs.To tackle the challenge of predicting optimal process parameters,a multiobjective prediction model integrating physical models and machine learning was developed.The predicted optimal parameters(0.78 mol%Mo doping,381℃ annealing)were experimentally verified,yielding<5%relative error in most film properties.The prepared TFT exhibits a mobility of 13.5 cm^(2)/V·s(10.6%improvement),an on/off current ratio of 3.82�106,and an SS of 0.40 V/dec,demonstrating superior efficiency over conventional trial-and-error methods.展开更多
Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology.The effect of a Cu-Cr-Zr(CCZ)copper alloy source/drain(S/D)electrode on flexi...Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology.The effect of a Cu-Cr-Zr(CCZ)copper alloy source/drain(S/D)electrode on flexible amorphous neodymiumdoped indium-zinc-oxide thin-film transistors(NdIZO-TFTs)was investigated.Compared with pure copper(Cu)and aluminum(Al)S/D electrodes,the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode,which is ascribed to the alloy-assisted interface layer besides work function matching.X-ray photoelectron spectroscopy(XPS)depth profile analysis was conducted to examine the chemical states of the contact interface,and the result suggested that chromium(Cr)oxide and zirconium(Zr)oxide aggregate at the interface between the S/D electrode and the active layer,acting as a potential barrier against residual free electron carriers.The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility(μsat)of 40.3 cm^(2)·V-1·s^(-1),an Ion/Ioff ratio of 1:24×10^(8),a subthreshold swing(SS)value of 0.12 V·decade^(-1),and a threshold voltage(Vth)of 0.83 V.This work is anticipated to provide a novel approach to the realization of highperformance flexible NdIZO-TFTs working in enhancement mode.展开更多
基金supported by CUI CAN Program of Guangdong Province(CC/XM-202401ZJ0201)National Natural Science Foundation of China(Grant 62174057)+4 种基金Guangdong Natural Science Foundation(2024A1515012216 and 2023A1515011026)Educational Commission of Guangdong Province(Grant 2022ZDZX1002)State Key Lab of Luminescent Materials and Devices(Skllmd-2024-05)Southwest Institute of Technology and Engineering Cooperation Fund(HDHDW59A020301)Guangdong Basic Research Center of Excellence for Energy and Information Polymer Materials.
文摘In_(2)O_(3)-based TFTs have garnered widespread attention due to their higher mobilities than amorphous silicon.Previous studies have indicated that rare earth doping can enhance the NBIS stability of TFTs,but this often results in a decrease in mobility.To improve the mobility of TFTs while maintaining stability,we incorporated Mo and Pr into In_(2)O_(3),fabricating InPrMoO TFTs.Mo doping is believed to positively affect In_(2)O_(3)through reducing porosity and defects.Pr doping has been proposed as a potential strategy to enhance the NBIS stability of In_(2)O_(3).A nondestructiveμPCD detector was employed to characterize the local defect states of the film.X-ray photoelectron spectroscopy data demonstrate that the InPrMoO film with 0.8 mol%Mo doping has the lowest concentration of oxygen vacancies(Vo).TFTs fabricated using the InPrMoO film doped with an optimized concentration of 0.8 mol%Mo exhibit superior electrical properties(μ_(sat)=12.2 cm^(2)/V·s,V_(th)=1.6 V,I_(on)/I_(off)=2.17×10^(6),and SS=0.47 V/dec)and the minimalΔVth under NBS/PBS/NBIS=−0.65 V/0.79 V/−0.70 V.The synergistic effect of Mo and Pr doping has led to enhanced film uniformity and density,consequently improving the mobility and stability of the TFTs.To tackle the challenge of predicting optimal process parameters,a multiobjective prediction model integrating physical models and machine learning was developed.The predicted optimal parameters(0.78 mol%Mo doping,381℃ annealing)were experimentally verified,yielding<5%relative error in most film properties.The prepared TFT exhibits a mobility of 13.5 cm^(2)/V·s(10.6%improvement),an on/off current ratio of 3.82�106,and an SS of 0.40 V/dec,demonstrating superior efficiency over conventional trial-and-error methods.
基金supported by the National Natural Science Foundation of China(Grant Nos.51771074,62074059,and 22090024)Guangdong Major Project of Basic and Applied Basic Research(No.2019B030302007)+5 种基金Fundamental Research Funds for the Central Universities(Nos.2020ZYGXZR060 and 2019MS012)Guangdong Natural Science Foundation(No.2018A0303130211)South China University of Technology 100 Step Ladder Climbing Plan Research Project(Nos.j2tw202004035,j2tw202004034,and j2tw202004095)National College Students Innovation and Entrepreneurship Training Program(Nos.202010561001,202010561004,and 202010561009)2021 Guangdong University Student Science and Technology Innovation Special Fund(“Climbing Plan”Special Fund)(No.pdjh2021b0036)Ji Hua Laboratory Scientific Research Project(X190221TF191).
文摘Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology.The effect of a Cu-Cr-Zr(CCZ)copper alloy source/drain(S/D)electrode on flexible amorphous neodymiumdoped indium-zinc-oxide thin-film transistors(NdIZO-TFTs)was investigated.Compared with pure copper(Cu)and aluminum(Al)S/D electrodes,the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode,which is ascribed to the alloy-assisted interface layer besides work function matching.X-ray photoelectron spectroscopy(XPS)depth profile analysis was conducted to examine the chemical states of the contact interface,and the result suggested that chromium(Cr)oxide and zirconium(Zr)oxide aggregate at the interface between the S/D electrode and the active layer,acting as a potential barrier against residual free electron carriers.The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility(μsat)of 40.3 cm^(2)·V-1·s^(-1),an Ion/Ioff ratio of 1:24×10^(8),a subthreshold swing(SS)value of 0.12 V·decade^(-1),and a threshold voltage(Vth)of 0.83 V.This work is anticipated to provide a novel approach to the realization of highperformance flexible NdIZO-TFTs working in enhancement mode.
